Emerging perovskite materials for high density data storage and artificial synapses

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)62_Review of books or of software (or similar publications/items)Not applicablepeer-review

20 Scopus Citations
View graph of relations

Author(s)

  • Yan Wang
  • Ziyu Lv
  • Li Zhou
  • Xiaoli Chen
  • Jinrui Chen
  • Ye Zhou
  • Su-Ting Han

Detail(s)

Original languageEnglish
Pages (from-to)1600-1617
Journal / PublicationJournal of Materials Chemistry C
Volume6
Issue number7
Online published16 Jan 2018
Publication statusPublished - 21 Feb 2018

Abstract

Since the discovery of perovskite materials with the general chemical formula ABX3 in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, properties. Perovskite materials have high potential for developing nonvolatile high-density data storage devices. In this review, we summarized the current development of the application of perovskites in nonvolatile memories with an emphasis on the resistive switching properties. The unique advances of perovskite materials are introduced, followed by an assortment of the characterisations of their compositions and crystal structures. The insight into perovskite materials in artificial synapses has also concluded with predictable opportunities and challenges in this promising field.

Citation Format(s)

Emerging perovskite materials for high density data storage and artificial synapses. / Wang, Yan; Lv, Ziyu; Zhou, Li; Chen, Xiaoli; Chen, Jinrui; Zhou, Ye; Roy, V. A. L.; Han, Su-Ting.

In: Journal of Materials Chemistry C, Vol. 6, No. 7, 21.02.2018, p. 1600-1617.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)62_Review of books or of software (or similar publications/items)Not applicablepeer-review