Emergence of topological bands on the surface of ZrSnTe crystal

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • R. Lou
  • Q. N. Xu
  • B. B. Fu
  • L. Y. Kong
  • Y. G. Shi
  • P. Richard
  • H. M. Weng
  • Z. Fang
  • S. S. Sun
  • Q. Wang
  • H. C. Lei
  • T. Qian
  • H. Ding
  • S. C. Wang

Detail(s)

Original languageEnglish
Article number241104
Journal / PublicationPhysical Review B
Volume93
Issue number24
Publication statusPublished - 15 Jun 2016
Externally publishedYes

Abstract

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of the topological insulator (TI) state, although such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.

Bibliographic Note

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Citation Format(s)

Emergence of topological bands on the surface of ZrSnTe crystal. / Lou, R.; Ma, J. Z.; Xu, Q. N.; Fu, B. B.; Kong, L. Y.; Shi, Y. G.; Richard, P.; Weng, H. M.; Fang, Z.; Sun, S. S.; Wang, Q.; Lei, H. C.; Qian, T.; Ding, H.; Wang, S. C.

In: Physical Review B, Vol. 93, No. 24, 241104, 15.06.2016.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review