Abstract
This study manifests that high-resolution (0.4 μm) 3D X-ray microscopy can be leveraged for characterizing electromigration-induced (EM-induced) voids in Ni/ SnAg/Ni microbumps non-destructively and effectively. The results of 3D X-ray observations were comparable to those obtained by common destructive approaches. Inspected by consecutive laminographic observations, the voids were likely to shape irregularly and locate randomly. To evaluate the degrees of voiding failures, three levels including slight, medium, and severe were defined based on 3D X-ray observations. Voided microbumps were constantly detected (71 % ∼ 75 %) under high current density as 8× 104 A/cm2, whereas they were seldomly observed (33 %) at low current density as 1.6 × 104 A/cm2. Moreover, the dependencies of voiding failures on Sn α angles were explicated. The non-voided microbumps had intact Sn in high α angles, while the voided microbumps had residual Sn grains with lower α angles and could vary with different voiding levels. © 2025 Elsevier Inc.
| Original language | English |
|---|---|
| Article number | 115589 |
| Journal | Materials Characterization |
| Volume | 229 |
| Issue number | Part B |
| Online published | 24 Sept 2025 |
| DOIs | |
| Publication status | Published - Nov 2025 |
Funding
This work was financially supported by the National Science and Technology Council (NSTC), Taiwan, through the T-Star Center Project: “Future Semiconductor Technology Research Center” (114-2634-F-A49-001 and 111-2634-F-A49-008), and by the Center for Advanced Semiconductor Technology Research, Taiwan, under the Higher Education Sprout Project of the Ministry of Education. In addition, the authors would like to acknowledge the technical supports by Mars Tohken Solution. (MTS).
Research Keywords
- 3D X-ray microscopy
- Electromigration
- Electronic packaging
- Non-destructive characterization
- Solder microbumps
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