Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Teng-Han Huang
  • Po-Kang Yang
  • Wen-Yuan Chang
  • Jui-Fen Chien
  • Chen-Fang Kang
  • Miin-Jang Chen

Detail(s)

Original languageEnglish
Pages (from-to)7593-7597
Journal / PublicationJournal of Materials Chemistry C
Volume1
Issue number45
Online published1 Oct 2013
Publication statusPublished - 7 Dec 2013
Externally publishedYes

Abstract

Metal oxides suffering from oxygen molecule chemisorption display environment-dependent metastability, leading to unstable resistive memory characteristics and performance degradation. To obtain ambient-independent characteristics, we introduced nitrogen into ZnO resistive memory devices, compensating for the native defects and suppressing oxygen chemisorption, giving rise to a significant improvement in switching behavior without undesired surface effects. Moreover, by thermal activation of the nitrogen doping via annealing, an increased yield ratio from 50% to 82%, a reduced current compliance from 15 mA to 5 mA, and more stable cycling endurance are obtained. Our findings give physical insight into designing resistive memory devices.

Citation Format(s)

Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory. / Huang, Teng-Han; Yang, Po-Kang; Chang, Wen-Yuan; Chien, Jui-Fen; Kang, Chen-Fang; Chen, Miin-Jang; He, Jr-Hau.

In: Journal of Materials Chemistry C, Vol. 1, No. 45, 07.12.2013, p. 7593-7597.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal