Electronics and Optoelectronics Based on Tellurium

Jiajia Zha, Dechen Dong, Haoxin Huang, Yunpeng Xia, Jingyi Tong, Handa Liu, Hau Ping Chan, Johnny C. Ho, Chunsong Zhao*, Yang Chai*, Chaoliang Tan*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

19 Citations (Scopus)
18 Downloads (CityUHK Scholars)

Abstract

As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared. © 2024 The Author(s). Advanced Materials published by Wiley-VCH GmbH.
Original languageEnglish
Article number2408969
JournalAdvanced Materials
Volume36
Issue number45
Online published16 Sept 2024
DOIs
Publication statusPublished - 7 Nov 2024

Funding

J.Z. and D.D. contributed equally to this work. C.T. thanks the funding support from the National Natural Science Foundation of China – Excellent Young Scientists Fund (Hong Kong and Macau) (52122002), ECS Scheme (21201821), and General Research Fund (11200122) from the Research Grant Council of Hong Kong. Y.C. Thanks the funding support from the General Research Fund (15301322) from the Research Grant Council of Hong Kong. C.Z. declares this as a non-Huawei service achievement.

Research Keywords

  • electronics
  • optoelectronics
  • synthesis methods
  • tellurium
  • van der Waals materials

Publisher's Copyright Statement

  • This full text is made available under CC-BY-NC 4.0. https://creativecommons.org/licenses/by-nc/4.0/

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