Electronic structures and optical properties induced by silicon twin boundaries : The first-principle calculation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1384-1390
Journal / PublicationPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume379
Issue number20-21
Publication statusPublished - 3 Jul 2015

Abstract

The defect states and optical absorption enhancement induced by twin boundaries in silicon are investigated by first-principle calculation. The defect states in the forbidden bands are identified and based on the established electronic structures, the dielectric functions and absorption coefficients are derived. An important result of our calculations is that visible light absorption by the twinning configuration is enhanced significantly, indicating that twinning structures possibly play an important role in silicon-based photovoltaic devices.

Research Area(s)

  • Electronic states, Optical properties, Twin structure

Citation Format(s)

Electronic structures and optical properties induced by silicon twin boundaries : The first-principle calculation. / Liu, X. X.; Liu, L. Z.; Wu, X. L.; Chu, Paul K.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 379, No. 20-21, 03.07.2015, p. 1384-1390.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal