Electronic structures and optical properties induced by silicon twin boundaries : The first-principle calculation

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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11 Scopus Citations

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Author(s)

X. X. Liu
L. Z. Liu
X. L. Wu
Paul K. Chu

Detail(s)

Original language	English
Pages (from-to)	1384-1390
Journal / Publication	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	379
Issue number	20-21
Publication status	Published - 3 Jul 2015

Link(s)

DOI	DOI https://doi.org/10.1016/j.physleta.2015.02.042 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84939949014&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(759b40dd-b8a0-477e-8034-7906bd57e183).html

Abstract

The defect states and optical absorption enhancement induced by twin boundaries in silicon are investigated by first-principle calculation. The defect states in the forbidden bands are identified and based on the established electronic structures, the dielectric functions and absorption coefficients are derived. An important result of our calculations is that visible light absorption by the twinning configuration is enhanced significantly, indicating that twinning structures possibly play an important role in silicon-based photovoltaic devices.

Research Area(s)

Electronic states, Optical properties, Twin structure

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Optical Properties Keyphrases

First-principles Ca... Keyphrases

Defect States Keyphrases

Twin Boundary Keyphrases

Electronic Structur... Keyphrases

optical properties INIS

absorption INIS

electronic structur... INIS

Boundaries Physics

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Citation Format(s)

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Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation. / Liu, X. X.; Liu, L. Z.; Wu, X. L. et al.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 379, No. 20-21, 03.07.2015, p. 1384-1390.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Liu, XX, Liu, LZ, Wu, XL & Chu, PK 2015, 'Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation', Physics Letters, Section A: General, Atomic and Solid State Physics, vol. 379, no. 20-21, pp. 1384-1390. https://doi.org/10.1016/j.physleta.2015.02.042

Liu, X. X., Liu, L. Z., Wu, X. L., & Chu, P. K. (2015). Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation. Physics Letters, Section A: General, Atomic and Solid State Physics, 379(20-21), 1384-1390. https://doi.org/10.1016/j.physleta.2015.02.042

Liu XX, Liu LZ, Wu XL, Chu PK. Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation. Physics Letters, Section A: General, Atomic and Solid State Physics. 2015 Jul 3;379(20-21):1384-1390. doi: 10.1016/j.physleta.2015.02.042

Liu, X. X. ; Liu, L. Z. ; Wu, X. L. et al. / Electronic structures and optical properties induced by silicon twin boundaries : The first-principle calculation. In: Physics Letters, Section A: General, Atomic and Solid State Physics. 2015 ; Vol. 379, No. 20-21. pp. 1384-1390.