Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation

X. X. Liu; L. Z. Liu; X. L. Wu; Paul K. Chu

doi:10.1016/j.physleta.2015.02.042

Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation

X. X. Liu, L. Z. Liu, X. L. Wu^*, Paul K. Chu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

The defect states and optical absorption enhancement induced by twin boundaries in silicon are investigated by first-principle calculation. The defect states in the forbidden bands are identified and based on the established electronic structures, the dielectric functions and absorption coefficients are derived. An important result of our calculations is that visible light absorption by the twinning configuration is enhanced significantly, indicating that twinning structures possibly play an important role in silicon-based photovoltaic devices.

Original language	English
Pages (from-to)	1384-1390
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	379
Issue number	20-21
DOIs	https://doi.org/10.1016/j.physleta.2015.02.042
Publication status	Published - 3 Jul 2015

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SDG 7 Affordable and Clean Energy

Research Keywords

Electronic states
Optical properties
Twin structure

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10.1016/j.physleta.2015.02.042

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@article{759b40ddb8a0477e80347906bd57e183,

title = "Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation",

abstract = "The defect states and optical absorption enhancement induced by twin boundaries in silicon are investigated by first-principle calculation. The defect states in the forbidden bands are identified and based on the established electronic structures, the dielectric functions and absorption coefficients are derived. An important result of our calculations is that visible light absorption by the twinning configuration is enhanced significantly, indicating that twinning structures possibly play an important role in silicon-based photovoltaic devices.",

keywords = "Electronic states, Optical properties, Twin structure",

author = "Liu, {X. X.} and Liu, {L. Z.} and Wu, {X. L.} and Chu, {Paul K.}",

year = "2015",

month = jul,

day = "3",

doi = "10.1016/j.physleta.2015.02.042",

language = "English",

volume = "379",

pages = "1384--1390",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

number = "20-21",

}

Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation. / Liu, X. X.; Liu, L. Z.; Wu, X. L. et al.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 379, No. 20-21, 03.07.2015, p. 1384-1390.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Electronic structures and optical properties induced by silicon twin boundaries

T2 - The first-principle calculation

AU - Liu, X. X.

AU - Liu, L. Z.

AU - Wu, X. L.

AU - Chu, Paul K.

PY - 2015/7/3

Y1 - 2015/7/3

N2 - The defect states and optical absorption enhancement induced by twin boundaries in silicon are investigated by first-principle calculation. The defect states in the forbidden bands are identified and based on the established electronic structures, the dielectric functions and absorption coefficients are derived. An important result of our calculations is that visible light absorption by the twinning configuration is enhanced significantly, indicating that twinning structures possibly play an important role in silicon-based photovoltaic devices.

AB - The defect states and optical absorption enhancement induced by twin boundaries in silicon are investigated by first-principle calculation. The defect states in the forbidden bands are identified and based on the established electronic structures, the dielectric functions and absorption coefficients are derived. An important result of our calculations is that visible light absorption by the twinning configuration is enhanced significantly, indicating that twinning structures possibly play an important role in silicon-based photovoltaic devices.

KW - Electronic states

KW - Optical properties

KW - Twin structure

UR - http://www.scopus.com/inward/record.url?scp=84939949014&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84939949014&origin=recordpage

U2 - 10.1016/j.physleta.2015.02.042

DO - 10.1016/j.physleta.2015.02.042

M3 - RGC 21 - Publication in refereed journal

SN - 0375-9601

VL - 379

SP - 1384

EP - 1390

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 20-21

ER -

Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation

Abstract

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