TY - JOUR
T1 - Electronic Structures and Carrier Mobilities of Blue Phosphorus Nanoribbons and Nanotubes
T2 - A First-Principles Study
AU - Xiao, Jin
AU - Long, Mengqiu
AU - Deng, Chao-Sheng
AU - He, Jun
AU - Cui, Li-Ling
AU - Xu, Hui
PY - 2016/3/3
Y1 - 2016/3/3
N2 - Blue phosphorus is a new graphene-like material which has already been proven thermostable in theory, and the synthesis of it on experiment can also be expected. Here, we have investigated the electronic structures and carrier mobilities of armchair and zigzag monolayer blue phosphorus nanoribbons (PNRs) and nanotubes (PNTs) using density functional theory combined with Boltzmann transport method with relaxation time approximation. It is found that both PNRs and PNTs are indirect-gap semiconductors with a considerable energy gap. The numerical calculation results indicate that the armchair PNTs, zigzag PNTs, and armchair PNRs have the characteristics of p-type semiconductors in electrical conduction, because the hole mobility is over 1 order larger than the electron mobility. However, the electron mobility is greater than the hole mobility in zigzag PNRs. Owing to the existing px orbitals (in-plane and along ribbon direction), which are very sensitive to the atomic structure strain, the band edges will be significantly changed under strain which results in a linear decrease of the gap of PNRs and PNTs with deformation aggravation. The charge mobilities can also be effectively regulated by the strain.
AB - Blue phosphorus is a new graphene-like material which has already been proven thermostable in theory, and the synthesis of it on experiment can also be expected. Here, we have investigated the electronic structures and carrier mobilities of armchair and zigzag monolayer blue phosphorus nanoribbons (PNRs) and nanotubes (PNTs) using density functional theory combined with Boltzmann transport method with relaxation time approximation. It is found that both PNRs and PNTs are indirect-gap semiconductors with a considerable energy gap. The numerical calculation results indicate that the armchair PNTs, zigzag PNTs, and armchair PNRs have the characteristics of p-type semiconductors in electrical conduction, because the hole mobility is over 1 order larger than the electron mobility. However, the electron mobility is greater than the hole mobility in zigzag PNRs. Owing to the existing px orbitals (in-plane and along ribbon direction), which are very sensitive to the atomic structure strain, the band edges will be significantly changed under strain which results in a linear decrease of the gap of PNRs and PNTs with deformation aggravation. The charge mobilities can also be effectively regulated by the strain.
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U2 - 10.1021/acs.jpcc.5b12112
DO - 10.1021/acs.jpcc.5b12112
M3 - RGC 21 - Publication in refereed journal
SN - 1932-7447
VL - 120
SP - 4638
EP - 4646
JO - The Journal of Physical Chemistry C
JF - The Journal of Physical Chemistry C
IS - 8
ER -