Electronic structure of MoO3−x/graphene interface

Qi-Hui Wu; Yingqi Zhao; Guo Hong; Jian-Guo Ren; Chundong Wang; Wenjun Zhang; Shuit-Tong Lee

doi:10.1016/j.carbon.2013.07.091

Electronic structure of MoO_3−x/graphene interface

Qi-Hui Wu, Yingqi Zhao, Guo Hong, Jian-Guo Ren, Chundong Wang, Wenjun Zhang, Shuit-Tong Lee^*

^*Corresponding author for this work

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

51 Citations (Scopus)

Abstract

The interfacial electronic structure of MoO_3-_x/graphene has been investigated using photoemission spectroscopy. The experimental data showed that upon deposition of MoO_3-_x, the Fermi level of graphene shifts downward gradually from its Dirac point due to the p-type doping effect. From the Fermi level shift of -0.28 eV, the hole density of graphene was estimated to be 5.44 × 10¹² cm^-2. The formation of surface negative dipole due to electron transfer from graphene to the deposited MoO_3-x films increased the sample′s work function. The existence of gap states in MoO_3-x induced by oxygen vacancies greatly reduced the hole injection barrier at the MoO_3-x/graphene interface. © 2013 Elsevier Ltd.

Original language	English
Pages (from-to)	46-52
Journal	Carbon
Volume	65
Online published	2 Aug 2013
DOIs	https://doi.org/10.1016/j.carbon.2013.07.091
Publication status	Published - Dec 2013

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@article{82c78231d42241fb8fc8c95155fc1653,

title = "Electronic structure of MoO3−x/graphene interface",

abstract = "The interfacial electronic structure of MoO3-x/graphene has been investigated using photoemission spectroscopy. The experimental data showed that upon deposition of MoO3-x, the Fermi level of graphene shifts downward gradually from its Dirac point due to the p-type doping effect. From the Fermi level shift of -0.28 eV, the hole density of graphene was estimated to be 5.44 × 1012 cm-2. The formation of surface negative dipole due to electron transfer from graphene to the deposited MoO3-x films increased the sample′s work function. The existence of gap states in MoO3-x induced by oxygen vacancies greatly reduced the hole injection barrier at the MoO3-x/graphene interface. {\textcopyright} 2013 Elsevier Ltd.",

author = "Qi-Hui Wu and Yingqi Zhao and Guo Hong and Jian-Guo Ren and Chundong Wang and Wenjun Zhang and Shuit-Tong Lee",

year = "2013",

month = dec,

doi = "10.1016/j.carbon.2013.07.091",

language = "English",

volume = "65",

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journal = "Carbon",

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TY - JOUR

T1 - Electronic structure of MoO3−x/graphene interface

AU - Wu, Qi-Hui

AU - Zhao, Yingqi

AU - Hong, Guo

AU - Ren, Jian-Guo

AU - Wang, Chundong

AU - Zhang, Wenjun

AU - Lee, Shuit-Tong

PY - 2013/12

Y1 - 2013/12

N2 - The interfacial electronic structure of MoO3-x/graphene has been investigated using photoemission spectroscopy. The experimental data showed that upon deposition of MoO3-x, the Fermi level of graphene shifts downward gradually from its Dirac point due to the p-type doping effect. From the Fermi level shift of -0.28 eV, the hole density of graphene was estimated to be 5.44 × 1012 cm-2. The formation of surface negative dipole due to electron transfer from graphene to the deposited MoO3-x films increased the sample′s work function. The existence of gap states in MoO3-x induced by oxygen vacancies greatly reduced the hole injection barrier at the MoO3-x/graphene interface. © 2013 Elsevier Ltd.

AB - The interfacial electronic structure of MoO3-x/graphene has been investigated using photoemission spectroscopy. The experimental data showed that upon deposition of MoO3-x, the Fermi level of graphene shifts downward gradually from its Dirac point due to the p-type doping effect. From the Fermi level shift of -0.28 eV, the hole density of graphene was estimated to be 5.44 × 1012 cm-2. The formation of surface negative dipole due to electron transfer from graphene to the deposited MoO3-x films increased the sample′s work function. The existence of gap states in MoO3-x induced by oxygen vacancies greatly reduced the hole injection barrier at the MoO3-x/graphene interface. © 2013 Elsevier Ltd.

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U2 - 10.1016/j.carbon.2013.07.091

DO - 10.1016/j.carbon.2013.07.091

M3 - RGC 21 - Publication in refereed journal

SN - 0008-6223

VL - 65

SP - 46

EP - 52

JO - Carbon

JF - Carbon

ER -