Electronic structure at the interfaces of vertically aligned zinc oxide nanowires and sensitizing layers in photochemical solar cells

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Z. H. Chen
  • C. P. Liu
  • H. E. Wang
  • Y. B. Tang
  • Z. T. Liu
  • S. T. Lee
  • I. Bello

Detail(s)

Original languageEnglish
Article number325108
Journal / PublicationJournal of Physics D: Applied Physics
Volume44
Issue number32
Publication statusPublished - 17 Aug 2011

Abstract

Vertically aligned zinc oxide (ZnO) nanowires (NWs) coated with cadmium telluride (CdTe) shell layers via simple evaporation have been used to fabricate photochemical solar cells. The narrow bandgap of CdTe (∼1.45 eV) enhances the optical absorption in the range of visible light. The detailed electronic structures of ZnO/CdTe and ZnO/Dye were investigated and compared with the aid of ultraviolet photoemission spectroscopy. The analysis shows electric dipole at the ZnO/dye interface due to Zn2+/carboxy bonding while no significant bonding existed at the ZnO/CdTe interface. The ZnO/CdTe interface is a characteristic of a small heterojunction barrier where the excited electrons can be transferred to the conduction band of ZnO NWs through defect levels. The average stable short circuit current density taken at the fifth minute of light illumination for the photochemical solar cell reaches 4.69 mA cm-2, while it is only 3.90 mA cm-2 for in situ dye sensitized solar cells. © 2011 IOP Publishing Ltd.

Citation Format(s)

Electronic structure at the interfaces of vertically aligned zinc oxide nanowires and sensitizing layers in photochemical solar cells. / Chen, Z. H.; Liu, C. P.; Wang, H. E.; Tang, Y. B.; Liu, Z. T.; Zhang, W. J.; Lee, S. T.; Zapien, J. A.; Bello, I.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 32, 325108, 17.08.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review