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Electronic structure and magnetism in g -C4N3 controlled by strain engineering

L. Z. Liu, X. L. Wu*, X. X. Liu, Paul K. Chu*

*Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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    Abstract

    Regulation of magnetism and half-metallicity has attracted much attention because of its potential in spintronics. The magnetic properties and electronic structure of graphitic carbon nitride (g-C4N3) with external strain are determined theoretically based on the density function theory and many-body perturbation theory (G0W0). Asymmetric deformation induced by uniaxial strain not only regulates the magnetic characteristics but also leads to a transformation from half-metallicity to metallicity. However, this transition cannot occur in the structure with symmetric deformation induced by biaxial strain. Our results suggest the use of strain engineering in metal-free spintronics applications.
    Original languageEnglish
    Article number132406
    JournalApplied Physics Letters
    Volume106
    Issue number13
    DOIs
    Publication statusPublished - 30 Mar 2015

    Publisher's Copyright Statement

    • COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in L. Z. Liu, X. L. Wu, X. X. Liu, and Paul K. Chu , "Electronic structure and magnetism in g-C4N3 controlled by strain engineering", Appl. Phys. Lett. 106, 132406 (2015) and may be found at https://doi.org/10.1063/1.4916814.

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