Electronic structure and magnetism in g -C4N3 controlled by strain engineering
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 132406 |
Journal / Publication | Applied Physics Letters |
Volume | 106 |
Issue number | 13 |
Publication status | Published - 30 Mar 2015 |
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DOI | DOI |
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Attachment(s) | Documents
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-84926429445&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(0173f737-6010-4a1b-bb0c-297d52f65af9).html |
Abstract
Regulation of magnetism and half-metallicity has attracted much attention because of its potential in spintronics. The magnetic properties and electronic structure of graphitic carbon nitride (g-C4N3) with external strain are determined theoretically based on the density function theory and many-body perturbation theory (G0W0). Asymmetric deformation induced by uniaxial strain not only regulates the magnetic characteristics but also leads to a transformation from half-metallicity to metallicity. However, this transition cannot occur in the structure with symmetric deformation induced by biaxial strain. Our results suggest the use of strain engineering in metal-free spintronics applications.
Research Area(s)
Citation Format(s)
Electronic structure and magnetism in g -C4N3 controlled by strain engineering. / Liu, L. Z.; Wu, X. L.; Liu, X. X. et al.
In: Applied Physics Letters, Vol. 106, No. 13, 132406, 30.03.2015.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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