Electronic structure and magnetism in g -C4N3 controlled by strain engineering

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Original languageEnglish
Article number132406
Journal / PublicationApplied Physics Letters
Volume106
Issue number13
Publication statusPublished - 30 Mar 2015

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Abstract

Regulation of magnetism and half-metallicity has attracted much attention because of its potential in spintronics. The magnetic properties and electronic structure of graphitic carbon nitride (g-C4N3) with external strain are determined theoretically based on the density function theory and many-body perturbation theory (G0W0). Asymmetric deformation induced by uniaxial strain not only regulates the magnetic characteristics but also leads to a transformation from half-metallicity to metallicity. However, this transition cannot occur in the structure with symmetric deformation induced by biaxial strain. Our results suggest the use of strain engineering in metal-free spintronics applications.

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Electronic structure and magnetism in g -C4N3 controlled by strain engineering. / Liu, L. Z.; Wu, X. L.; Liu, X. X. et al.
In: Applied Physics Letters, Vol. 106, No. 13, 132406, 30.03.2015.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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