Abstract
We present here a review of our experimental and theoretical works leading to our current understanding of the factors affecting ferromagnetic coupling between Mn spins in group III-Mn-V ferromagnetic semiconductors. The significance of the interstitialMn defects, the Fermi level controlled incorporation of substitutionalMn atoms and themaximumhole concentrationwere established by a series of experimentswith different material structures and processing. Our results indicate that any improvement in the magnetic properties of this material systemwill require decoupling of the doping process fromthe introduction ofmagneticmoments. We have also shown that the electronic structure of the Mn impurity band can be described in terms of a band anticrossing model. The model explains hole transport properties and the effect of alloying on the magnetic properties of group III-Mn-As. Moreover, it can also be used to predict trends in the magnetic properties of other ternary and dilute quaternary III-Mn-V semiconductors. © 2009 by Pan Stanford Publishing Pte Ltd. All rights reserved.
| Original language | English |
|---|---|
| Title of host publication | Handbook of Spintronic Semiconductors |
| Editors | Irina A. Buyanova |
| Place of Publication | Singapore |
| Publisher | Pan Stanford Publishing Pte. Ltd. |
| Pages | 123-156 |
| ISBN (Electronic) | 978-981-4267-67-0 |
| ISBN (Print) | 978-981-4267-36-6 |
| DOIs | |
| Publication status | Published - 1 May 2010 |
| Externally published | Yes |
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