Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

C. Yan; S. K. Jha; J. C. Qian; Z. F. Zhou; B. He; T. W. Ng; K. Y. Li; W. J. Zhang; I. Bello; J. E. Klemberg-Sapieha; L. Martinu

doi:10.1063/1.4795298

Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

C. Yan
, S. K. Jha
, J. C. Qian
, Z. F. Zhou
, B. He
, T. W. Ng
, K. Y. Li
, W. J. Zhang
, I. Bello
, J. E. Klemberg-Sapieha
, L. Martinu

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

44 Downloads (CityUHK Scholars)

Abstract

Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of ∼0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB₁₄ nanoparticles. © 2013 American Institute of Physics.

Original language	English
Article number	122110
Journal	Applied Physics Letters
Volume	102
Issue number	12
DOIs	https://doi.org/10.1063/1.4795298
Publication status	Published - 25 Mar 2013

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in C. Yan, S. K. Jha, J. C. Qian, Z. F. Zhou, B. He, T. W. Ng, K. Y. Li, W. J. Zhang, I. Bello, J. E. Klemberg-Sapieha, and L. Martinu , "Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering", Appl. Phys. Lett. 102, 122110 (2013) and may be found at https://doi.org/10.1063/1.4795298.

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title = "Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering",

abstract = "Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of ∼0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB14 nanoparticles. {\textcopyright} 2013 American Institute of Physics.",

author = "C. Yan and Jha, \{S. K.\} and Qian, \{J. C.\} and Zhou, \{Z. F.\} and B. He and Ng, \{T. W.\} and Li, \{K. Y.\} and Zhang, \{W. J.\} and I. Bello and Klemberg-Sapieha, \{J. E.\} and L. Martinu",

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doi = "10.1063/1.4795298",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

AU - Yan, C.

AU - Jha, S. K.

AU - Qian, J. C.

AU - Zhou, Z. F.

AU - He, B.

AU - Ng, T. W.

AU - Li, K. Y.

AU - Zhang, W. J.

AU - Bello, I.

AU - Klemberg-Sapieha, J. E.

AU - Martinu, L.

PY - 2013/3/25

Y1 - 2013/3/25

N2 - Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of ∼0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB14 nanoparticles. © 2013 American Institute of Physics.

AB - Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of ∼0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB14 nanoparticles. © 2013 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/84875958600

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84875958600&origin=recordpage

U2 - 10.1063/1.4795298

DO - 10.1063/1.4795298

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122110

ER -

Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

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