Electronic structure and charge transport properties of amorphous Ta2O5 films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • V. A. Shvets
  • V. Sh Aliev
  • D. V. Gritsenko
  • S. S. Shaimeev
  • E. V. Fedosenko
  • S. V. Rykhlitski
  • V. V. Atuchin
  • V. A. Gritsenko
  • V. M. Tapilin

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)3025-3033
Journal / PublicationJournal of Non-Crystalline Solids
Volume354
Issue number26
Publication statusPublished - 15 May 2008

Abstract

Amorphous Ta2O5 films were deposited by sputtering Ta onto silicon substrates with reactive ion beam. Electron energy loss spectroscopy measurements on the film found that the plasma oscillation energy is 23.1 eV. The refractive index and the extinction coefficient were measured with spectroscopic ellipsometry over the spectral range of 1.9-4.9 eV. The optical band gap is found to be 4.2 ± 0.05 eV. The valence band consists of three bands separated by ionic gaps. The values of electron effective masses were estimated with DFT quantum-chemical calculation. Experiments on injection of minority carriers from silicon into oxide were also conducted and we found that the electron component of conduction current governed by the electron current in the amorphous Ta2O5. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

  • Ab initio, Atomic force and scanning tunneling microscopy, Band structure, Dielectric properties, relaxation, electric modulus, Ellipsometry, XPS

Citation Format(s)

Electronic structure and charge transport properties of amorphous Ta2O5 films. / Shvets, V. A.; Aliev, V. Sh; Gritsenko, D. V.; Shaimeev, S. S.; Fedosenko, E. V.; Rykhlitski, S. V.; Atuchin, V. V.; Gritsenko, V. A.; Tapilin, V. M.; Wong, H.

In: Journal of Non-Crystalline Solids, Vol. 354, No. 26, 15.05.2008, p. 3025-3033.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review