Electronic states in hybrid boron nitride and graphene structures

M. Zhao; Y. H. Huang; F. Ma; T. W. Hu; K. W. Xu; Paul K. Chu

doi:10.1063/1.4817883

Electronic states in hybrid boron nitride and graphene structures

M. Zhao, Y. H. Huang, F. Ma, T. W. Hu, K. W. Xu, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry. © 2013 AIP Publishing LLC.

Original language	English
Article number	63707
Journal	Journal of Applied Physics
Volume	114
Issue number	6
DOIs	https://doi.org/10.1063/1.4817883
Publication status	Published - 14 Aug 2013

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in M. Zhao, Y. H. Huang, F. Ma, T. W. Hu, K. W. Xu, and Paul K. Chu , "Electronic states in hybrid boron nitride and graphene structures", Journal of Applied Physics 114, 063707 (2013) and may be found at https://doi.org/10.1063/1.4817883.

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AU - Huang, Y. H.

AU - Ma, F.

AU - Hu, T. W.

AU - Xu, K. W.

AU - Chu, Paul K.

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N2 - The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry. © 2013 AIP Publishing LLC.

AB - The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry. © 2013 AIP Publishing LLC.

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VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 63707

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Electronic states in hybrid boron nitride and graphene structures

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