Electronic states in hybrid boron nitride and graphene structures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • M. Zhao
  • Y. H. Huang
  • F. Ma
  • T. W. Hu
  • K. W. Xu

Detail(s)

Original languageEnglish
Article number63707
Journal / PublicationJournal of Applied Physics
Volume114
Issue number6
Publication statusPublished - 14 Aug 2013

Abstract

The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry. © 2013 AIP Publishing LLC.

Citation Format(s)

Electronic states in hybrid boron nitride and graphene structures. / Zhao, M.; Huang, Y. H.; Ma, F.; Hu, T. W.; Xu, K. W.; Chu, Paul K.

In: Journal of Applied Physics, Vol. 114, No. 6, 63707, 14.08.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal