Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • O. J. Glembocki
  • J. A. Tuchman
  • J. A. Dagata
  • K. K. Ko
  • C. E. Stutz

Detail(s)

Original languageEnglish
Pages (from-to)114-116
Journal / PublicationApplied Physics Letters
Volume73
Issue number1
Publication statusPublished - 1998
Externally publishedYes

Abstract

Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs from near the valence band to midgap, but has no effect on n-GaAs. For ion energies below 250 eV, post-etch P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it. © 1998 American Institute of Physics.

Citation Format(s)

Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5. / Glembocki, O. J.; Tuchman, J. A.; Dagata, J. A. et al.

In: Applied Physics Letters, Vol. 73, No. 1, 1998, p. 114-116.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review