Electronic Level Alignment at an Indium Tin Oxide/PbI2 Interface and Its Applications for Organic Electronic Devices

Qiaogang Song, Tong Lin, Xue Sun, Bei Chu, Zisheng Su*, Huishan Yang*, Wenlian Li, Chun Sing Lee

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

9 Citations (Scopus)

Abstract

The electronic level alignment at the indium tin oxide (ITO)/PbI2 interface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbI2 as well as a downward shift energy level at the ITO/PbI2 interface. These indicate that PbI2 can be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/C70 planar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4′,4″-tri(N-carbazolyl)triphenylamine-((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbI2 interface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbI2 layer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 × 1011 jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs.
Original languageEnglish
Pages (from-to)8909-8916
JournalACS Applied Materials and Interfaces
Volume10
Issue number10
Online published21 Feb 2018
DOIs
Publication statusPublished - 14 Mar 2018

Research Keywords

  • anode buffer layer
  • lead iodide
  • n-type semiconductor
  • organic electronic devices

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