Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range

N. Segercrantz; K. M. Yu; M. Ting; W. L. Sarney; S. P. Svensson; S. V. Novikov; C. T. Foxon; W. Walukiewicz

doi:10.1063/1.4932592

Electronic band structure of highly mismatched GaN_1-xSb_x alloys in a broad composition range

N. Segercrantz^*, K. M. Yu, M. Ting, W. L. Sarney, S. P. Svensson, S. V. Novikov, C. T. Foxon, W. Walukiewicz

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

26 Citations (Scopus)

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Abstract

In this letter, we study the optical properties of GaN_1-xSb_x thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN_1-xSb_x in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.

Original language	English
Article number	142104
Journal	Applied Physics Letters
Volume	107
Issue number	14
DOIs	https://doi.org/10.1063/1.4932592
Publication status	Published - 5 Oct 2015

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COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in N. Segercrantz, K. M. Yu, M. Ting, W. L. Sarney, S. P. Svensson, S. V. Novikov, C. T. Foxon, and W. Walukiewicz , "Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range", Appl. Phys. Lett. 107, 142104 (2015) and may be found at https://doi.org/10.1063/1.4932592.

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abstract = "In this letter, we study the optical properties of GaN1-xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1-xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.",

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AU - Yu, K. M.

AU - Ting, M.

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Novikov, S. V.

AU - Foxon, C. T.

AU - Walukiewicz, W.

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