Electronic and transport properties of porous graphene sheets and nanoribbons: Benzo-CMPs and BN codoped derivatives

Si Li; Zhao-Di Yang; Guiling Zhang; Xiao Cheng Zeng

doi:10.1039/c5tc01954k

Electronic and transport properties of porous graphene sheets and nanoribbons: Benzo-CMPs and BN codoped derivatives

Si Li, Zhao-Di Yang^*, Guiling Zhang, Xiao Cheng Zeng

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

We investigate the electronic and electron transport properties of a series of 2D porous n-benzo-CMP (CMP refers to π-conjugated microporous polymer) sheets with different pore sizes n and their boron-nitride (BN) codoped derivatives, BN-n-benzo-CMPs, as well as one-dimensional (1D) porous graphene nanoribbons (p-GNRs) tailored from n-benzo-CMPs and BN-n-benzo-CMPs using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods. We find that the n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with direct band gaps (0.57-1.75 eV). Their band gap decreases with increasing pore size n. In addition, the 1D armchair and zigzag p-GNRs tailored from 2D n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with their band gaps ranging from 0.19 to 2.0 eV. BN codoping, pore size (n), and the width of nanoribbons (w) can all be used to tune the band gap of either 2D porous graphenes or their corresponding 1D p-GNRs. Computed current-voltage (I-V_b) curves are consistent with the semiconducting properties and suggest that both BN-3-benzo-CMPs and BN-p-3ZGNRs (w = 4) can be exploited for applications in low-dimensional electronics.

Original language	English
Pages (from-to)	9637-9649
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	37
DOIs	https://doi.org/10.1039/c5tc01954k
Publication status	Published - 18 Aug 2015
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{15bc0de433f049af8ca5c605343a40e9,

title = "Electronic and transport properties of porous graphene sheets and nanoribbons: Benzo-CMPs and BN codoped derivatives",

abstract = "We investigate the electronic and electron transport properties of a series of 2D porous n-benzo-CMP (CMP refers to π-conjugated microporous polymer) sheets with different pore sizes n and their boron-nitride (BN) codoped derivatives, BN-n-benzo-CMPs, as well as one-dimensional (1D) porous graphene nanoribbons (p-GNRs) tailored from n-benzo-CMPs and BN-n-benzo-CMPs using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods. We find that the n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with direct band gaps (0.57-1.75 eV). Their band gap decreases with increasing pore size n. In addition, the 1D armchair and zigzag p-GNRs tailored from 2D n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with their band gaps ranging from 0.19 to 2.0 eV. BN codoping, pore size (n), and the width of nanoribbons (w) can all be used to tune the band gap of either 2D porous graphenes or their corresponding 1D p-GNRs. Computed current-voltage (I-Vb) curves are consistent with the semiconducting properties and suggest that both BN-3-benzo-CMPs and BN-p-3ZGNRs (w = 4) can be exploited for applications in low-dimensional electronics.",

author = "Si Li and Zhao-Di Yang and Guiling Zhang and Zeng, {Xiao Cheng}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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month = aug,

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doi = "10.1039/c5tc01954k",

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TY - JOUR

T1 - Electronic and transport properties of porous graphene sheets and nanoribbons

T2 - Benzo-CMPs and BN codoped derivatives

AU - Li, Si

AU - Yang, Zhao-Di

AU - Zhang, Guiling

AU - Zeng, Xiao Cheng

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2015/8/18

Y1 - 2015/8/18

N2 - We investigate the electronic and electron transport properties of a series of 2D porous n-benzo-CMP (CMP refers to π-conjugated microporous polymer) sheets with different pore sizes n and their boron-nitride (BN) codoped derivatives, BN-n-benzo-CMPs, as well as one-dimensional (1D) porous graphene nanoribbons (p-GNRs) tailored from n-benzo-CMPs and BN-n-benzo-CMPs using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods. We find that the n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with direct band gaps (0.57-1.75 eV). Their band gap decreases with increasing pore size n. In addition, the 1D armchair and zigzag p-GNRs tailored from 2D n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with their band gaps ranging from 0.19 to 2.0 eV. BN codoping, pore size (n), and the width of nanoribbons (w) can all be used to tune the band gap of either 2D porous graphenes or their corresponding 1D p-GNRs. Computed current-voltage (I-Vb) curves are consistent with the semiconducting properties and suggest that both BN-3-benzo-CMPs and BN-p-3ZGNRs (w = 4) can be exploited for applications in low-dimensional electronics.

AB - We investigate the electronic and electron transport properties of a series of 2D porous n-benzo-CMP (CMP refers to π-conjugated microporous polymer) sheets with different pore sizes n and their boron-nitride (BN) codoped derivatives, BN-n-benzo-CMPs, as well as one-dimensional (1D) porous graphene nanoribbons (p-GNRs) tailored from n-benzo-CMPs and BN-n-benzo-CMPs using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods. We find that the n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with direct band gaps (0.57-1.75 eV). Their band gap decreases with increasing pore size n. In addition, the 1D armchair and zigzag p-GNRs tailored from 2D n-benzo-CMP and BN-n-benzo-CMP (n = 3, 4, 5) sheets are all semiconductors with their band gaps ranging from 0.19 to 2.0 eV. BN codoping, pore size (n), and the width of nanoribbons (w) can all be used to tune the band gap of either 2D porous graphenes or their corresponding 1D p-GNRs. Computed current-voltage (I-Vb) curves are consistent with the semiconducting properties and suggest that both BN-3-benzo-CMPs and BN-p-3ZGNRs (w = 4) can be exploited for applications in low-dimensional electronics.

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U2 - 10.1039/c5tc01954k

DO - 10.1039/c5tc01954k

M3 - RGC 21 - Publication in refereed journal

SN - 2050-7534

VL - 3

SP - 9637

EP - 9649

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 37

ER -

Electronic and transport properties of porous graphene sheets and nanoribbons: Benzo-CMPs and BN codoped derivatives

Abstract

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