Electronic and optical properties of energetic particle-irradiated in-rich InGaN

S. X. Li; K. M. Yu; R. E. Jones; J. Wu; W. Walukiewicz; J. W. Ager III; W. Shan; E. E. Haller; Hai Lu; William J. Schaff; W. Kemp

doi:10.1557/proc-864-e7.10

Electronic and optical properties of energetic particle-irradiated in-rich InGaN

S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, William J. Schaff, W. Kemp

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

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Abstract

We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and ⁴He ⁺ were used to produce displacement damage doses (D _d) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D _d and finally saturate after a sufficiently high D _d. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E _FS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at E _FS. © 2005 Materials Research Society.

Original language	English
Article number	E7.10
Pages (from-to)	357-362
Journal	Materials Research Society Symposium Proceedings
Volume	864
DOIs	https://doi.org/10.1557/proc-864-e7.10
Publication status	Published - 2005
Externally published	Yes
Event	2005 Materials Research Society Spring Meeting (2005 MRS Spring Meeting) - San Francisco, United States Duration: 28 Mar 2005 → 1 Apr 2005 https://catalog.princeton.edu/catalog/SCSB-5221693 https://www.mrs.org/docs/default-source/meetings-events/spring-meetings/meeting-abstracts-2000-2004/spring-2005-abstracts/abstracts-symposium-aa-dynamic-self-organizing-systems-in-multifunctional-nanomaterials-and-nanostructures.pdf?sfvrsn=bb5a7210_5 https://www.mrs.org/spring2005 http://assets.cambridge.org/97811074/08982/toc/9781107408982_toc.pdf

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title = "Electronic and optical properties of energetic particle-irradiated in-rich InGaN",

abstract = "We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and 4He + were used to produce displacement damage doses (D d) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D d and finally saturate after a sufficiently high D d. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E FS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at E FS. {\textcopyright} 2005 Materials Research Society.",

author = "Li, {S. X.} and Yu, {K. M.} and Jones, {R. E.} and J. Wu and W. Walukiewicz and {Ager III}, {J. W.} and W. Shan and Haller, {E. E.} and Hai Lu and Schaff, {William J.} and W. Kemp",

year = "2005",

doi = "10.1557/proc-864-e7.10",

language = "English",

volume = "864",

pages = "357--362",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 Materials Research Society Spring Meeting (2005 MRS Spring Meeting) ; Conference date: 28-03-2005 Through 01-04-2005",

url = "https://catalog.princeton.edu/catalog/SCSB-5221693, https://www.mrs.org/docs/default-source/meetings-events/spring-meetings/meeting-abstracts-2000-2004/spring-2005-abstracts/abstracts-symposium-aa-dynamic-self-organizing-systems-in-multifunctional-nanomaterials-and-nanostructures.pdf?sfvrsn=bb5a7210_5, https://www.mrs.org/spring2005, http://assets.cambridge.org/97811074/08982/toc/9781107408982_toc.pdf",

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TY - JOUR

T1 - Electronic and optical properties of energetic particle-irradiated in-rich InGaN

AU - Li, S. X.

AU - Yu, K. M.

AU - Jones, R. E.

AU - Wu, J.

AU - Walukiewicz, W.

AU - Ager III, J. W.

AU - Shan, W.

AU - Haller, E. E.

AU - Lu, Hai

AU - Schaff, William J.

AU - Kemp, W.

PY - 2005

Y1 - 2005

N2 - We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and 4He + were used to produce displacement damage doses (D d) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D d and finally saturate after a sufficiently high D d. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E FS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at E FS. © 2005 Materials Research Society.

AB - We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and 4He + were used to produce displacement damage doses (D d) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D d and finally saturate after a sufficiently high D d. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E FS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at E FS. © 2005 Materials Research Society.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-30544432720&origin=recordpage

U2 - 10.1557/proc-864-e7.10

DO - 10.1557/proc-864-e7.10

M3 - RGC 22 - Publication in policy or professional journal

SN - 0272-9172

VL - 864

SP - 357

EP - 362

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - E7.10

T2 - 2005 Materials Research Society Spring Meeting (2005 MRS Spring Meeting)

Y2 - 28 March 2005 through 1 April 2005

ER -

Electronic and optical properties of energetic particle-irradiated in-rich InGaN

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