@inproceedings{2d2dd4f3c52e48e9adf3ef8cdce94f4c,
title = "Electron transport properties of InN",
abstract = "High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing. {\textcopyright} 2006 Materials Research Society.",
author = "Jones, \{R. E.\} and \{Van Genuchten\}, \{H. C. M.\} and Li, \{S. X.\} and L. Hsu and Yu, \{K. M.\} and W. Walukiewicz and \{Ager III\}, \{J. W.\} and Haller, \{E. E.\} and H. Lu and Schaff, \{W. J.\}",
year = "2005",
month = dec,
doi = "10.1557/PROC-0892-FF06-06",
language = "English",
isbn = "1558998462",
series = "MRS Symposium Proceedings Series",
publisher = "Cambridge University Press",
booktitle = "MRS Symposium Proceedings. Volume 892",
address = "United Kingdom",
note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",
}