Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • C. Y. Liu
  • T. T. Sheng
  • C. H. Tung
  • D. R. Frear
  • P. Elenius

Detail(s)

Original languageEnglish
Pages (from-to)750-754
Journal / PublicationJournal of Applied Physics
Volume87
Issue number2
Publication statusPublished - 15 Jan 2000
Externally publishedYes

Abstract

The wetting reaction between molten eutectic SnPb solder and a sputtered trilayer Cu/Ni(V)/Al thin film metallization was studied using cross-sectional transmission electron microscopy and scanning electron microscopy. Reaction temperatures were from 200 to 240°C and reaction times ranged from 1 to 40 min. The initial reaction products were Cu6Sn5 and Cu3Sn. The latter transforms to the former after an annealing greater than 1 min at 220°C. The Cu6Sn5 grains adhere well to the Ni(V) surface and no spalling of them was observed, even after 40 min at 220°C. This surprising result indicates that the Cu/Ni(V)/Al or Cu6Sn5 /Ni(V)/Al is a stable thin film metallization for low temperature eutectic SnPb solder direct chip attachment to organic substrates. Additionally, Kirkendall voids accompanied Cu3Sn formation, yet the voids disappear when the Cu3Sn transforms to Cu6Sn5. © 2000 American Institute of Physics.

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Citation Format(s)

Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization. / Liu, C. Y.; Tu, K. N.; Sheng, T. T. et al.
In: Journal of Applied Physics, Vol. 87, No. 2, 15.01.2000, p. 750-754.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review