Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell

Nazmul Ahsan; Naoya Miyashita; Kin Man Yu; Wladek Walukiewicz; Yoshitaka Okada

doi:10.1109/JPHOTOV.2015.2412451

Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell

Nazmul Ahsan
, Naoya Miyashita
, Kin Man Yu
, Wladek Walukiewicz
, Yoshitaka Okada

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

Abstract

Improved open-circuit voltages have been achieved in dilute nitride thin-film intermediate-band solar cells by optimizing intermediate-band barrier layers. The blocking properties of the AlGaAs electron barrier are found to critically depend on the barrier-doping level. Open-circuit voltages V_OC improved when electron-doping levels in the AlGaAs barriers were reduced. This is ascribed to the increased association of V_OC with the larger gap defined by the valence and conduction bands due to the improved electrical isolation of the intermediate band.

Original language	English
Article number	7076589
Pages (from-to)	878-884
Journal	IEEE Journal of Photovoltaics
Volume	5
Issue number	3
Online published	1 Apr 2015
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2412451
Publication status	Published - May 2015
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

Dilute nitride
intermediate-band (IB) solar cell
molecular beam epitaxy (MBE)
thin-film solar cell

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10.1109/JPHOTOV.2015.2412451

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title = "Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell",

abstract = "Improved open-circuit voltages have been achieved in dilute nitride thin-film intermediate-band solar cells by optimizing intermediate-band barrier layers. The blocking properties of the AlGaAs electron barrier are found to critically depend on the barrier-doping level. Open-circuit voltages VOC improved when electron-doping levels in the AlGaAs barriers were reduced. This is ascribed to the increased association of VOC with the larger gap defined by the valence and conduction bands due to the improved electrical isolation of the intermediate band.",

keywords = "Dilute nitride, intermediate-band (IB) solar cell, molecular beam epitaxy (MBE), thin-film solar cell",

author = "Nazmul Ahsan and Naoya Miyashita and Yu, \{Kin Man\} and Wladek Walukiewicz and Yoshitaka Okada",

year = "2015",

month = may,

doi = "10.1109/JPHOTOV.2015.2412451",

language = "English",

volume = "5",

pages = "878--884",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "3",

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TY - JOUR

T1 - Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell

AU - Ahsan, Nazmul

AU - Miyashita, Naoya

AU - Yu, Kin Man

AU - Walukiewicz, Wladek

AU - Okada, Yoshitaka

PY - 2015/5

Y1 - 2015/5

N2 - Improved open-circuit voltages have been achieved in dilute nitride thin-film intermediate-band solar cells by optimizing intermediate-band barrier layers. The blocking properties of the AlGaAs electron barrier are found to critically depend on the barrier-doping level. Open-circuit voltages VOC improved when electron-doping levels in the AlGaAs barriers were reduced. This is ascribed to the increased association of VOC with the larger gap defined by the valence and conduction bands due to the improved electrical isolation of the intermediate band.

AB - Improved open-circuit voltages have been achieved in dilute nitride thin-film intermediate-band solar cells by optimizing intermediate-band barrier layers. The blocking properties of the AlGaAs electron barrier are found to critically depend on the barrier-doping level. Open-circuit voltages VOC improved when electron-doping levels in the AlGaAs barriers were reduced. This is ascribed to the increased association of VOC with the larger gap defined by the valence and conduction bands due to the improved electrical isolation of the intermediate band.

KW - Dilute nitride

KW - intermediate-band (IB) solar cell

KW - molecular beam epitaxy (MBE)

KW - thin-film solar cell

UR - https://www.scopus.com/pages/publications/85027967583

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85027967583&origin=recordpage

U2 - 10.1109/JPHOTOV.2015.2412451

DO - 10.1109/JPHOTOV.2015.2412451

M3 - RGC 21 - Publication in refereed journal

SN - 2156-3381

VL - 5

SP - 878

EP - 884

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 3

M1 - 7076589

ER -

Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell

Abstract

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