Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Le Wang; Qinghua Zhang; Lei Chang; Lu You; Xu He; Kuijuan Jin; Lin Gu; Haizhong Guo; Chen Ge; Yaqing Feng; Junling Wang

doi:10.1002/aelm.201700321

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Le Wang
, Qinghua Zhang
, Lei Chang
, Lu You
, Xu He
, Kuijuan Jin
, Lin Gu
, Haizhong Guo
, Chen Ge
, Yaqing Feng
, Junling Wang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

42 Citations (Scopus)

Abstract

The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb-SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb-SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original language	English
Article number	1700321
Journal	Advanced Electronic Materials
Volume	3
Issue number	10
DOIs	https://doi.org/10.1002/aelm.201700321
Publication status	Published - 1 Oct 2017
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

heterostructures
memory
nickelates
oxygen vacancy
resistive switching

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title = "Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures",

abstract = "The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb-SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb-SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates. {\textcopyright} 2017 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

keywords = "heterostructures, memory, nickelates, oxygen vacancy, resistive switching",

author = "Le Wang and Qinghua Zhang and Lei Chang and Lu You and Xu He and Kuijuan Jin and Lin Gu and Haizhong Guo and Chen Ge and Yaqing Feng and Junling Wang",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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TY - JOUR

T1 - Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

AU - Wang, Le

AU - Zhang, Qinghua

AU - Chang, Lei

AU - You, Lu

AU - He, Xu

AU - Jin, Kuijuan

AU - Gu, Lin

AU - Guo, Haizhong

AU - Ge, Chen

AU - Feng, Yaqing

AU - Wang, Junling

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb-SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb-SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

AB - The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb-SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb-SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

KW - heterostructures

KW - memory

KW - nickelates

KW - oxygen vacancy

KW - resistive switching

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U2 - 10.1002/aelm.201700321

DO - 10.1002/aelm.201700321

M3 - RGC 21 - Publication in refereed journal

SN - 2199-160X

VL - 3

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 10

M1 - 1700321

ER -

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Abstract

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