Electro-thermal modeling of SiC power devices for circuit simulation

Shan Yin; Tao Wang; K. J. Tseng; Jiyun Zhao; Xiaolei Hu

doi:10.1109/IECON.2013.6699223

Electro-thermal modeling of SiC power devices for circuit simulation

Shan Yin^*, Tao Wang, K. J. Tseng, Jiyun Zhao, Xiaolei Hu

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

25 Citations (Scopus)

Abstract

The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both static and dynamic models are formulated by curve fitting. Some simplifications are introduced during modeling to improve convergence and simulation speed. An all-SiC boost converter is also analyzed by simulation to evaluate the models. © 2013 IEEE.

Original language	English
Title of host publication	IECON Proceedings (Industrial Electronics Conference)
Pages	718-723
DOIs	https://doi.org/10.1109/IECON.2013.6699223
Publication status	Published - 2013
Externally published	Yes
Event	39th Annual Conference of the IEEE Industrial Electronics Society (IECON 2013) - Austria Center Vienna, Vienna, Austria Duration: 10 Nov 2013 → 14 Nov 2013

Conference

Conference	39th Annual Conference of the IEEE Industrial Electronics Society (IECON 2013)
Place	Austria
City	Vienna
Period	10/11/13 → 14/11/13

Research Keywords

behavior modeling
electro-thermal
MOSFET
PSpice
Schottky diode
SiC

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10.1109/IECON.2013.6699223

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@inproceedings{aa6b79110e924f2f84c960e145861a67,

title = "Electro-thermal modeling of SiC power devices for circuit simulation",

abstract = "The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both static and dynamic models are formulated by curve fitting. Some simplifications are introduced during modeling to improve convergence and simulation speed. An all-SiC boost converter is also analyzed by simulation to evaluate the models. {\textcopyright} 2013 IEEE.",

keywords = "behavior modeling, electro-thermal, MOSFET, PSpice, Schottky diode, SiC",

author = "Shan Yin and Tao Wang and Tseng, {K. J.} and Jiyun Zhao and Xiaolei Hu",

year = "2013",

doi = "10.1109/IECON.2013.6699223",

language = "English",

isbn = "9781479902248",

pages = "718--723",

booktitle = "IECON Proceedings (Industrial Electronics Conference)",

note = "39th Annual Conference of the IEEE Industrial Electronics Society (IECON 2013) ; Conference date: 10-11-2013 Through 14-11-2013",

}

TY - GEN

T1 - Electro-thermal modeling of SiC power devices for circuit simulation

AU - Yin, Shan

AU - Wang, Tao

AU - Tseng, K. J.

AU - Zhao, Jiyun

AU - Hu, Xiaolei

PY - 2013

Y1 - 2013

N2 - The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both static and dynamic models are formulated by curve fitting. Some simplifications are introduced during modeling to improve convergence and simulation speed. An all-SiC boost converter is also analyzed by simulation to evaluate the models. © 2013 IEEE.

AB - The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both static and dynamic models are formulated by curve fitting. Some simplifications are introduced during modeling to improve convergence and simulation speed. An all-SiC boost converter is also analyzed by simulation to evaluate the models. © 2013 IEEE.

KW - behavior modeling

KW - electro-thermal

KW - MOSFET

KW - PSpice

KW - Schottky diode

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=84893582548&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84893582548&origin=recordpage

U2 - 10.1109/IECON.2013.6699223

DO - 10.1109/IECON.2013.6699223

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781479902248

SP - 718

EP - 723

BT - IECON Proceedings (Industrial Electronics Conference)

T2 - 39th Annual Conference of the IEEE Industrial Electronics Society (IECON 2013)

Y2 - 10 November 2013 through 14 November 2013

ER -

Electro-thermal modeling of SiC power devices for circuit simulation

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Research Keywords

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