Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

S. R. Dong; X. L. Bian; Hao Jin; N. N. Hu; Jian Zhou; Hei Wong; M. J. Deen

doi:10.1063/1.4818157

Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

S. R. Dong
X. L. Bian
Hao Jin
N. N. Hu
Jian Zhou
M. J. Deen

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Article number	62904
Journal / Publication	Applied Physics Letters
Volume	103
Issue number	6
Publication status	Published - 5 Aug 2013

Link(s)

DOI	DOI https://doi.org/10.1063/1.4818157 Final Published version
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Attachment(s)	Documents 5890976.pdf Final Published version, 1.25 MB, PDF Publisher's Copyright Statement COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in S. R. Dong, X. L. Bian, Hao Jin, N. N. Hu, Jian Zhou, Hei Wong, and M. J. Deen , "Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure", Appl. Phys. Lett. 103, 062904 (2013) and may be found at https://doi.org/10.1063/1.4818157.
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84881635472&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(539a8788-119b-47fb-a089-5632f303f2ef).html

Abstract

An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. © 2013 AIP Publishing LLC.