Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

16 Scopus Citations
View graph of relations

Author(s)

  • S. R. Dong
  • X. L. Bian
  • Hao Jin
  • N. N. Hu
  • Jian Zhou
  • M. J. Deen

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number62904
Journal / PublicationApplied Physics Letters
Volume103
Issue number6
Publication statusPublished - 5 Aug 2013

Abstract

An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. © 2013 AIP Publishing LLC.

Citation Format(s)

Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure. / Dong, S. R.; Bian, X. L.; Jin, Hao; Hu, N. N.; Zhou, Jian; Wong, Hei; Deen, M. J.

In: Applied Physics Letters, Vol. 103, No. 6, 62904, 05.08.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal