Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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| Original language | English |
|---|---|
| Article number | 62904 |
| Journal / Publication | Applied Physics Letters |
| Volume | 103 |
| Issue number | 6 |
| Publication status | Published - 5 Aug 2013 |
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| DOI | DOI |
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| Attachment(s) | Documents
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| Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-84881635472&origin=recordpage |
| Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(539a8788-119b-47fb-a089-5632f303f2ef).html |
Abstract
An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. © 2013 AIP Publishing LLC.
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Citation Format(s)
Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure. / Dong, S. R.; Bian, X. L.; Jin, Hao et al.
In: Applied Physics Letters, Vol. 103, No. 6, 62904, 05.08.2013.
In: Applied Physics Letters, Vol. 103, No. 6, 62904, 05.08.2013.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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