Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

S. R. Dong; X. L. Bian; Hao Jin; N. N. Hu; Jian Zhou; Hei Wong; M. J. Deen

doi:10.1063/1.4818157

Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

S. R. Dong
, X. L. Bian
, Hao Jin
, N. N. Hu
, Jian Zhou
, Hei Wong
, M. J. Deen

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

19 Citations (Scopus)

36 Downloads (CityUHK Scholars)

Abstract

An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. © 2013 AIP Publishing LLC.

Original language	English
Article number	62904
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4818157
Publication status	Published - 5 Aug 2013

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in S. R. Dong, X. L. Bian, Hao Jin, N. N. Hu, Jian Zhou, Hei Wong, and M. J. Deen , "Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure", Appl. Phys. Lett. 103, 062904 (2013) and may be found at https://doi.org/10.1063/1.4818157.

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title = "Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure",

abstract = "An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. {\textcopyright} 2013 AIP Publishing LLC.",

author = "Dong, \{S. R.\} and Bian, \{X. L.\} and Hao Jin and Hu, \{N. N.\} and Jian Zhou and Hei Wong and Deen, \{M. J.\}",

year = "2013",

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day = "5",

doi = "10.1063/1.4818157",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

AU - Dong, S. R.

AU - Bian, X. L.

AU - Jin, Hao

AU - Hu, N. N.

AU - Zhou, Jian

AU - Wong, Hei

AU - Deen, M. J.

PY - 2013/8/5

Y1 - 2013/8/5

N2 - An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. © 2013 AIP Publishing LLC.

AB - An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30°C to 105°C. © 2013 AIP Publishing LLC.

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U2 - 10.1063/1.4818157

DO - 10.1063/1.4818157

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 62904

ER -

Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

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