Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Article number2210854
Journal / PublicationAdvanced Materials
Volume35
Issue number12
Online published9 Jan 2023
Publication statusPublished - 23 Mar 2023

Abstract

Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi2O2Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d33) of 4.4 ± 0.1 pm V−1. The random orientations and electrically dependent polarization of the dipoles in Bi2O2Se are separately uncovered owing to the structural symmetry-breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi2O2Se is explored on device-level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi2O2Se, the fabricated device exhibits “smart” photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 104 and a large MW to the sweeping range of 47% at VGS = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi2O2Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture. © 2023 Wiley-VCH GmbH.

Research Area(s)

  • Bi2O2Se, ferroelectric semiconductors, von Neumann architecture