Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

Banani Sen; B. L. Yang; H. Wong; C. W. Kok; M. K. Bera; P. K. Chu; A. Huang; K. Kakushima; H. Iwai

doi:10.1109/EDSSC.2007.4450205

Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

Banani Sen
, B. L. Yang
, H. Wong
, C. W. Kok
, M. K. Bera
, P. K. Chu
, A. Huang
, K. Kakushima
, H. Iwai

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

The effect of nitrogen implantation on thin lanthanum oxide (La ₂O₃) films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by Plasma Immersion Ion-Implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La₂O₃ network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric. © 2007 IEEE.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	637-640
DOIs	https://doi.org/10.1109/EDSSC.2007.4450205
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, China Duration: 20 Dec 2007 → 22 Dec 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Place	Taiwan, China
City	Tainan
Period	20/12/07 → 22/12/07

Research Keywords

High-k dielectric
Lanthanum oxide
Nitrogen
Plasma immersion ion-implantation

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10.1109/EDSSC.2007.4450205

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Sen, B., Yang, B. L., Wong, H., Kok, C. W., Bera, M. K., Chu, P. K., Huang, A., Kakushima, K., & Iwai, H. (2007). Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 637-640). Article 4450205 https://doi.org/10.1109/EDSSC.2007.4450205

@inproceedings{c62230110e36487bba4e9539d5a18ee4,

title = "Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation",

abstract = "The effect of nitrogen implantation on thin lanthanum oxide (La 2O3) films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by Plasma Immersion Ion-Implantation (PII) is found to be quite low (about 3\% near the surface). However, the introduction of nitrogen atoms into the La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric. {\textcopyright} 2007 IEEE.",

keywords = "High-k dielectric, Lanthanum oxide, Nitrogen, Plasma immersion ion-implantation",

author = "Banani Sen and Yang, \{B. L.\} and H. Wong and Kok, \{C. W.\} and Bera, \{M. K.\} and Chu, \{P. K.\} and A. Huang and K. Kakushima and H. Iwai",

year = "2007",

doi = "10.1109/EDSSC.2007.4450205",

language = "English",

isbn = "1424406374",

pages = "637--640",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Sen, B, Yang, BL, Wong, H, Kok, CW, Bera, MK, Chu, PK, Huang, A, Kakushima, K & Iwai, H 2007, Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450205, pp. 637-640, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, China, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450205

Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation. / Sen, Banani; Yang, B. L.; Wong, H. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 637-640 4450205.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

AU - Sen, Banani

AU - Yang, B. L.

AU - Wong, H.

AU - Kok, C. W.

AU - Bera, M. K.

AU - Chu, P. K.

AU - Huang, A.

AU - Kakushima, K.

AU - Iwai, H.

PY - 2007

Y1 - 2007

N2 - The effect of nitrogen implantation on thin lanthanum oxide (La 2O3) films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by Plasma Immersion Ion-Implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric. © 2007 IEEE.

AB - The effect of nitrogen implantation on thin lanthanum oxide (La 2O3) films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by Plasma Immersion Ion-Implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric. © 2007 IEEE.

KW - High-k dielectric

KW - Lanthanum oxide

KW - Nitrogen

KW - Plasma immersion ion-implantation

UR - https://www.scopus.com/pages/publications/43049170079

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-43049170079&origin=recordpage

U2 - 10.1109/EDSSC.2007.4450205

DO - 10.1109/EDSSC.2007.4450205

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1424406374

SN - 9781424406371

SP - 637

EP - 640

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

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