@inproceedings{bd546cd4a4f442639891c051117959c2,
title = "Electrical spin injection in light emitting Schottky diodes based on InGaAs/GaAs QW heterostructures",
abstract = "We demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of injected holes was detected by measuring circular polarization of the electroluminescence (EL) from the near surface In-GaAs/GaAs QW. An intermediate gold layer has been used in order to improve the spin injection efficiency. Over 40% degree of circular polarization of the EL has been observed at T= 2 K for the LESD structure with Au-Ni-Au Schottky contact. {\textcopyright} 2007 American Institute of Physics.",
keywords = "Hole spin injection, Quantum well, Schottky diode",
author = "Baidus, {N. V.} and Vasilevskiy, {M. I.} and Gomes, {M. J M} and Kulakovskii, {V. D.} and Zaitsev, {S. V.} and Dorokhin, {M. V.} and Demina, {P. B.} and Uskova, {E. A.} and Zvonkov, {B. N.}",
year = "2007",
doi = "10.1063/1.2730357",
language = "English",
isbn = "9780735403970",
volume = "893",
pages = "1257--1258",
booktitle = "AIP Conference Proceedings",
note = "28th International Conference on the Physics of Semiconductors (ICPS 2006) ; Conference date: 24-07-2006 Through 28-07-2006",
}