Electrical properties of textured (KNa) 0.44Li 0.06Nb 0.84Sb 0.06Ta 0.1O 3 thick films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Fang Fu
  • Jiwei Zhai
  • Zhengkui Xu
  • Wangfeng Bai
  • Lingbing Kong

Detail(s)

Original languageEnglish
Pages (from-to)3077-3081
Journal / PublicationJournal of Electronic Materials
Volume41
Issue number11
Publication statusPublished - Nov 2012

Abstract

Lead-free (KNa) 0.44Li 0.06Nb 0.84Sb 0.06Ta 0.1O 3 textured thick films with 25 μm thickness were fabricated by the reactive templated grain growth method. The influence of LiSbO 3 substitution on the degree of grain orientation was investigated. The addition of LiSbO 3 improved the dielectric properties of the K0.5Na0.5NbO 3 potassium sodium niobate (KNN) textured thick films. Leakage current behavior of the thick film was also reduced due to the LiSbO 3 doping, which is explicable based on the space-charge-limited currentmechanism. Itwas also found that the problemof interface effectwas alleviated due to the presence of LiSbO 3. Piezoelectric properties of thick film were improved dramatically owing to the co-effect of texturing and LiSbO 3 doping, with d 33* being sharply increased from 38 pm/V to 173 pm/V. © 2012 TMS.

Research Area(s)

  • Dielectric properties, Microstructure, Piezoelectricity, Textured thick film

Citation Format(s)

Electrical properties of textured (KNa) 0.44Li 0.06Nb 0.84Sb 0.06Ta 0.1O 3 thick films. / Fu, Fang; Zhai, Jiwei; Xu, Zhengkui et al.
In: Journal of Electronic Materials, Vol. 41, No. 11, 11.2012, p. 3077-3081.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review