Electrical properties of InN grown by molecular beam epitaxy

William J. Schaff; Hai Lu; Lester F. Eastman; Wladek Walukiewicz; Kin Man Yu; Stacia Keller; Sarah Kurtz; Brian Keyes; Lynn Gevilas

Electrical properties of InN grown by molecular beam epitaxy

William J. Schaff, Hai Lu, Lester F. Eastman, Wladek Walukiewicz, Kin Man Yu, Stacia Keller, Sarah Kurtz, Brian Keyes, Lynn Gevilas

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

20 Citations (Scopus)

Abstract

The basic properties of indium nitride (InN) are becoming understood due to advancement in growth techniques using molecular beam epitaxy. GaN and AlN buffers permit thick InN layer growth with reproducible structural, electrical and optical properties. Improved electrical properties include reduction in electron density in undoped InN and increased mobility as a function of InN layer thickness. Surface and interface electron accumulation add significant conductivity that is extracted for determination of the electron density profile. Electrochemical CV profiles confirm surface electron accumulation. Surface chemical exposures further raise electron accumulation. Early applications of low bulk, high surface, electron density InN include near-surface THz emission and electrochemical sensing. These effects result from surface electron accumulation of 2-3×10¹³cm^-2 sheet density.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V
Subtitle of host publication	Proceedings of the International Symposia
Editors	H. M. Ng, A. G. Baca
Publisher	The Electrochemical Society
Pages	358-371
Volume	2004-06
ISBN (Print)	9781566774192
Publication status	Published - 2004
Externally published	Yes
Event	206th Meeting of The Electrochemical Society (ECS) & 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ) - Hilton Hawaiian Village, Honolulu, HI, United States Duration: 3 Oct 2004 → 8 Oct 2004 https://www.electrochem.org/206

Conference

Conference	206th Meeting of The Electrochemical Society (ECS) & 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ)
Place	United States
City	Honolulu, HI
Period	3/10/04 → 8/10/04
Internet address	https://www.electrochem.org/206

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Schaff, W. J., Lu, H., Eastman, L. F., Walukiewicz, W., Yu, K. M., Keller, S., Kurtz, S., Keyes, B., & Gevilas, L. (2004). Electrical properties of InN grown by molecular beam epitaxy. In H. M. Ng, & A. G. Baca (Eds.), State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V: Proceedings of the International Symposia (Vol. 2004-06, pp. 358-371). The Electrochemical Society.

Schaff, William J. ; Lu, Hai ; Eastman, Lester F. et al. / Electrical properties of InN grown by molecular beam epitaxy. State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V: Proceedings of the International Symposia. editor / H. M. Ng ; A. G. Baca. Vol. 2004-06 The Electrochemical Society, 2004. pp. 358-371

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title = "Electrical properties of InN grown by molecular beam epitaxy",

abstract = "The basic properties of indium nitride (InN) are becoming understood due to advancement in growth techniques using molecular beam epitaxy. GaN and AlN buffers permit thick InN layer growth with reproducible structural, electrical and optical properties. Improved electrical properties include reduction in electron density in undoped InN and increased mobility as a function of InN layer thickness. Surface and interface electron accumulation add significant conductivity that is extracted for determination of the electron density profile. Electrochemical CV profiles confirm surface electron accumulation. Surface chemical exposures further raise electron accumulation. Early applications of low bulk, high surface, electron density InN include near-surface THz emission and electrochemical sensing. These effects result from surface electron accumulation of 2-3×1013 cm-2 sheet density.",

author = "Schaff, {William J.} and Hai Lu and Eastman, {Lester F.} and Wladek Walukiewicz and Yu, {Kin Man} and Stacia Keller and Sarah Kurtz and Brian Keyes and Lynn Gevilas",

year = "2004",

language = "English",

isbn = "9781566774192",

volume = "2004-06",

pages = "358--371",

editor = "Ng, {H. M.} and Baca, {A. G.}",

booktitle = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V",

publisher = "The Electrochemical Society",

address = "United States",

note = "206th Meeting of The Electrochemical Society (ECS) & 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ) ; Conference date: 03-10-2004 Through 08-10-2004",

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}

Schaff, WJ, Lu, H, Eastman, LF, Walukiewicz, W, Yu, KM, Keller, S, Kurtz, S, Keyes, B & Gevilas, L 2004, Electrical properties of InN grown by molecular beam epitaxy. in HM Ng & AG Baca (eds), State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V: Proceedings of the International Symposia. vol. 2004-06, The Electrochemical Society, pp. 358-371, 206th Meeting of The Electrochemical Society (ECS) & 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, HI, United States, 3/10/04.

Electrical properties of InN grown by molecular beam epitaxy. / Schaff, William J.; Lu, Hai; Eastman, Lester F. et al.
State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V: Proceedings of the International Symposia. ed. / H. M. Ng; A. G. Baca. Vol. 2004-06 The Electrochemical Society, 2004. p. 358-371.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Electrical properties of InN grown by molecular beam epitaxy

AU - Schaff, William J.

AU - Lu, Hai

AU - Eastman, Lester F.

AU - Walukiewicz, Wladek

AU - Yu, Kin Man

AU - Keller, Stacia

AU - Kurtz, Sarah

AU - Keyes, Brian

AU - Gevilas, Lynn

PY - 2004

Y1 - 2004

N2 - The basic properties of indium nitride (InN) are becoming understood due to advancement in growth techniques using molecular beam epitaxy. GaN and AlN buffers permit thick InN layer growth with reproducible structural, electrical and optical properties. Improved electrical properties include reduction in electron density in undoped InN and increased mobility as a function of InN layer thickness. Surface and interface electron accumulation add significant conductivity that is extracted for determination of the electron density profile. Electrochemical CV profiles confirm surface electron accumulation. Surface chemical exposures further raise electron accumulation. Early applications of low bulk, high surface, electron density InN include near-surface THz emission and electrochemical sensing. These effects result from surface electron accumulation of 2-3×1013 cm-2 sheet density.

AB - The basic properties of indium nitride (InN) are becoming understood due to advancement in growth techniques using molecular beam epitaxy. GaN and AlN buffers permit thick InN layer growth with reproducible structural, electrical and optical properties. Improved electrical properties include reduction in electron density in undoped InN and increased mobility as a function of InN layer thickness. Surface and interface electron accumulation add significant conductivity that is extracted for determination of the electron density profile. Electrochemical CV profiles confirm surface electron accumulation. Surface chemical exposures further raise electron accumulation. Early applications of low bulk, high surface, electron density InN include near-surface THz emission and electrochemical sensing. These effects result from surface electron accumulation of 2-3×1013 cm-2 sheet density.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-17044440192&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781566774192

VL - 2004-06

SP - 358

EP - 371

BT - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V

A2 - Ng, H. M.

A2 - Baca, A. G.

PB - The Electrochemical Society

T2 - 206th Meeting of The Electrochemical Society (ECS) & 2004 Fall Meeting of The Electrochemical Society of Japan (ECSJ)

Y2 - 3 October 2004 through 8 October 2004

ER -

Schaff WJ, Lu H, Eastman LF, Walukiewicz W, Yu KM, Keller S et al. Electrical properties of InN grown by molecular beam epitaxy. In Ng HM, Baca AG, editors, State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V: Proceedings of the International Symposia. Vol. 2004-06. The Electrochemical Society. 2004. p. 358-371

Electrical properties of InN grown by molecular beam epitaxy

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