Electrical properties of Be-implanted polycrystalline cubic boron nitride films

B. He; W. J. Zhang; Y. S. Zou; Y. M. Chong; Q. Ye; A. L. Ji; Y. Yang; I. Bello; S. T. Lee; G. H. Chen

doi:10.1063/1.2896643

Electrical properties of Be-implanted polycrystalline cubic boron nitride films

B. He
, W. J. Zhang
, Y. S. Zou
, Y. M. Chong
, Q. Ye
, A. L. Ji
, Y. Yang
, I. Bello
, S. T. Lee
, G. H. Chen

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

41 Citations (Scopus)

Abstract

P -type conductivity of polycrystalline cubic boron nitride (cBN) films was achieved by implantation of beryllium ions. The effects of implantation doses and annealing on the phase composition and electrical properties of cBN films were studied. A reduction in resistivity by seven orders of magnitude was observed. Hall measurement revealed a corresponding hole concentration of 6.1× 1018 cm-3 and mobility of 3 cm2 V s. The activation energy was estimated to be 0.20±0.02 eV from the temperature dependence of resistance. The electrical properties of Be-implanted films are comparable to that of Be-doped cBN single crystals synthesized by high-pressure and high-temperature method. © 2008 American Institute of Physics.

Original language	English
Article number	102108
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2896643
Publication status	Published - 2008

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@article{fe30d48ce96c459ab1182017059a4a97,

title = "Electrical properties of Be-implanted polycrystalline cubic boron nitride films",

abstract = "P -type conductivity of polycrystalline cubic boron nitride (cBN) films was achieved by implantation of beryllium ions. The effects of implantation doses and annealing on the phase composition and electrical properties of cBN films were studied. A reduction in resistivity by seven orders of magnitude was observed. Hall measurement revealed a corresponding hole concentration of 6.1× 1018 cm-3 and mobility of 3 cm2 V s. The activation energy was estimated to be 0.20±0.02 eV from the temperature dependence of resistance. The electrical properties of Be-implanted films are comparable to that of Be-doped cBN single crystals synthesized by high-pressure and high-temperature method. {\textcopyright} 2008 American Institute of Physics.",

author = "B. He and Zhang, \{W. J.\} and Zou, \{Y. S.\} and Chong, \{Y. M.\} and Q. Ye and Ji, \{A. L.\} and Y. Yang and I. Bello and Lee, \{S. T.\} and Chen, \{G. H.\}",

year = "2008",

doi = "10.1063/1.2896643",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Electrical properties of Be-implanted polycrystalline cubic boron nitride films

AU - He, B.

AU - Zhang, W. J.

AU - Zou, Y. S.

AU - Chong, Y. M.

AU - Ye, Q.

AU - Ji, A. L.

AU - Yang, Y.

AU - Bello, I.

AU - Lee, S. T.

AU - Chen, G. H.

PY - 2008

Y1 - 2008

N2 - P -type conductivity of polycrystalline cubic boron nitride (cBN) films was achieved by implantation of beryllium ions. The effects of implantation doses and annealing on the phase composition and electrical properties of cBN films were studied. A reduction in resistivity by seven orders of magnitude was observed. Hall measurement revealed a corresponding hole concentration of 6.1× 1018 cm-3 and mobility of 3 cm2 V s. The activation energy was estimated to be 0.20±0.02 eV from the temperature dependence of resistance. The electrical properties of Be-implanted films are comparable to that of Be-doped cBN single crystals synthesized by high-pressure and high-temperature method. © 2008 American Institute of Physics.

AB - P -type conductivity of polycrystalline cubic boron nitride (cBN) films was achieved by implantation of beryllium ions. The effects of implantation doses and annealing on the phase composition and electrical properties of cBN films were studied. A reduction in resistivity by seven orders of magnitude was observed. Hall measurement revealed a corresponding hole concentration of 6.1× 1018 cm-3 and mobility of 3 cm2 V s. The activation energy was estimated to be 0.20±0.02 eV from the temperature dependence of resistance. The electrical properties of Be-implanted films are comparable to that of Be-doped cBN single crystals synthesized by high-pressure and high-temperature method. © 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/40849089264

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-40849089264&origin=recordpage

U2 - 10.1063/1.2896643

DO - 10.1063/1.2896643

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102108

ER -

Electrical properties of Be-implanted polycrystalline cubic boron nitride films

Abstract

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