Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Article number12104
Journal / PublicationApplied Physics Letters
Volume105
Issue number1
Publication statusPublished - 7 Jul 2014

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Abstract

Si ion implantation with a set of ion energies and ion doses was carried out to dope hexagonal boron nitride (hBN) thin films synthesized by radio-frequency magnetron sputtering. Hall effect measurements revealed n-type conduction with a low resistivity of 0.5 Ω cm at room temperature, corresponding to an electron concentration of 2.0 × 1019 cm-3 and a mobility of 0.6 cm2/V s. Temperature-dependent resistivity measurements in a wide temperature range from 50 to 800 K demonstrated two shallow donor levels in the hBN band gap induced by Si doping, which was in consistence with the theoretical calculation by density function theory.

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Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films. / He, B.; Qiu, M.; Yuen, M. F. et al.
In: Applied Physics Letters, Vol. 105, No. 1, 12104, 07.07.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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