ELECTRICAL PARAMETER CONTROL FOR SEMICONDUCTOR DEVICE MANUFACTURING : A FABWIDE APPROACH
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 135-140 |
Journal / Publication | IFAC Proceedings Volumes (IFAC-PapersOnline) |
Volume | 40 |
Issue number | 5 |
Publication status | Published - 2007 |
Externally published | Yes |
Conference
Title | 8th IFAC Symposium on Dynamics and Control of Process Systems, 2007 |
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Place | Mexico |
City | Cancun |
Period | 6 - 8 June 2016 |
Link(s)
Abstract
Wafers that fail to meet their electrical specifications lead to scrap which negatively impacts yield and manufacturing costs. Most existing research has focused on controlling individual steps during the manufacturing process via run-to-run control, but almost no work has looked at directly controlling the electrical characteristics. A control scheme is proposed to directly control electrical parameter values. The control algorithm uses a model to predict electrical parameter values after each processing step and determines optimal adjustments for the future processing steps. Simulation results show significant reduction in electrical parameter variations for both constrained and unconstrained control.
Research Area(s)
- Hierarchical control, Least squares estimation, Multi-step controllers
Citation Format(s)
ELECTRICAL PARAMETER CONTROL FOR SEMICONDUCTOR DEVICE MANUFACTURING: A FABWIDE APPROACH. / Schoene, Clare; Qin, S. Joe; Kutanoglu, Erhan et al.
In: IFAC Proceedings Volumes (IFAC-PapersOnline), Vol. 40, No. 5, 2007, p. 135-140.
In: IFAC Proceedings Volumes (IFAC-PapersOnline), Vol. 40, No. 5, 2007, p. 135-140.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review