TY - GEN
T1 - Electrical characterization of through-silicon vias (TSV) with different physical configurations
AU - Zhao, Wen-Sheng
AU - Guo, Yong-Xin
AU - Yin, Wen-Yan
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2012
Y1 - 2012
N2 - Through-silicon vias (TSV) have been proposed to enable the 'More-than-Moore' technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately. © 2012 IEEE.
AB - Through-silicon vias (TSV) have been proposed to enable the 'More-than-Moore' technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately. © 2012 IEEE.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84875506395&origin=recordpage
U2 - 10.1109/EDAPS.2012.6469384
DO - 10.1109/EDAPS.2012.6469384
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781467314435
T3 - 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
SP - 173
EP - 176
BT - 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
T2 - 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
Y2 - 9 December 2012 through 11 December 2012
ER -