Electrical characterization of alloy thin films of VSi2 and V3Si

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)167-172
Journal / PublicationThin Solid Films
Volume140
Issue number1
Publication statusPublished - 16 Jun 1986
Externally publishedYes

Abstract

In situ resistivity measurement was used to study the crystallization and the electrical conduction processes of V3Si and VSi2 thin films as a function of temperature. The films were deposited by dual-electron-beam coevaporation through metallic masks in a van der Pauw configuration onto oxidized silicon substrates. In the as-deposited state the alloy thin films were amorphous. For the electrical characterization of VSi2, silicon-rich specimens with a V:Si atomic ratio of 1:3 were used. The kinetics of crystallization are well described by an equation of the Johnson-Mehl-Avrami type. Measurements of the electrical resistivity ρ{variant} over a wide temperature range (2-1100 K) on samples preheated at a high temperature exhibit a similar behavior for both the vanadium silicides, i.e. ρ{variant} rises less rapidly with temperature T than the Bloch-Grüneisen theory predicts and seems to approach a saturation value at the higher temperatures. An empirical formula is used to obtain a best fit of the resistivity curves. Polycrystalline V3Si thin film became superconductive at 15 K with a residual resistivity ratio of 10.6. © 1986.

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Citation Format(s)

Electrical characterization of alloy thin films of VSi2 and V3Si. / Nava, F.; Bisi, O.; Psaras, P.; Takai, H.; Tu, K. N.

In: Thin Solid Films, Vol. 140, No. 1, 16.06.1986, p. 167-172.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review