Electrical characterization and surface analysis of dry etch-induced damage on Si after etching in an ECR source

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

25 Scopus Citations
View graph of relations



Original languageEnglish
Pages (from-to)206-211
Journal / PublicationJournal of the Electrochemical Society
Issue number1
Publication statusPublished - Jan 1995
Externally publishedYes


In this paper the effects of etch-induced damage were studied. Si was etched with a Cl2 plasma generated by an electron cyclotron resonance (ECR) source. Through electrical characterization and surface analysis, surface damage was evaluated. A new damage model is proposed to relate the generation of defects to the etch conditions by comparing the increase in leakage current of the Schottky diodes after dry etching. Good agreement is obtained between the measured and the predicted Schottky diode characteristics.