Electrical and photoresponse properties of Au/ reduced graphene:poly(3-hexylthiophene) nanocomposite /p-Si photodiodes

S. Wageh, Ahmed A. Al-Ghamdi*, Yusuf Al-Turki, Aysegul Dere, S. C. Tjong, Farid El-Tantawy, F. Yakuphanoglu*

*Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    11 Citations (Scopus)

    Abstract

    Au/reduced graphene:poly(3-hexylthiophene) (P3HT) nanocomposite/p-Si/Al diodes have been prepared and their electrical characteristics have been investigated using current–voltage, capacitance–voltage and conductance–voltage measurements. The electronic parameters such as ideality factor (n) and barrier height (ΦB0) were determined. The photocurrent of the diodes is higher than their dark current. This indicates that the diodes exhibited a photoconducting behavior under various illumination conditions. The diode having molar ratio of RG:P3HT = 0.005 gives the highest photoresponsivity. This diode was analyzed in detail. The prepared Au/ RG:P3HT nanocomposite/p-Si/Al diode can be used as a solar position sensor for two axes tracking systems, a light meter, a sunlight detector and automatic shutter control sensor.
    Original languageEnglish
    Pages (from-to)1779-1789
    JournalOptical and Quantum Electronics
    Volume47
    Issue number7
    Online published29 Oct 2014
    DOIs
    Publication statusPublished - Jul 2015

    Research Keywords

    • Ideality factor
    • Nanocomposite
    • Photodiode

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