Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt

C. Y. Chen; P. H. Chang; K. T. Tsai; J. H. He

doi:10.1109/INEC.2010.5424962

Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt

C. Y. Chen
, P. H. Chang
, K. T. Tsai
, J. H. He^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm². The resistivity of the ZnO nanowires is measured to be 2.2x10^-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼10⁸ have been fabricated and characterized.

Original language	English
Title of host publication	INEC 2010
Subtitle of host publication	2010 3rd International Nanoelectronics Conference, Proceedings
Editors	Paul K Chu
Publisher	IEEE
Pages	1177-1178
ISBN (Electronic)	978-1-4244-3544-9
ISBN (Print)	978-1-4244-3543-2
DOIs	https://doi.org/10.1109/INEC.2010.5424962
Publication status	Published - Jan 2010
Externally published	Yes
Event	3rd IEEE International NanoElectronics Conference (INEC 2010) - City University of Hong Kong, Hong Kong, China Duration: 3 Jan 2010 → 8 Jan 2010 http://www.cityu.edu.hk/ieeeinec/

Publication series

Name	INEC - International Nanoelectronics Conference, Proceedings
Publisher	IEEE
ISSN (Print)	2159-3523
ISSN (Electronic)	2159-3531

Conference

Conference	3rd IEEE International NanoElectronics Conference (INEC 2010)
Place	China
City	Hong Kong
Period	3/01/10 → 8/01/10
Internet address	http://www.cityu.edu.hk/ieeeinec/

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10.1109/INEC.2010.5424962

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Chen, C. Y., Chang, P. H., Tsai, K. T., & He, J. H. (2010). Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt. In P. K. Chu (Ed.), INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1177-1178). Article 5424962 (INEC - International Nanoelectronics Conference, Proceedings). IEEE. https://doi.org/10.1109/INEC.2010.5424962

@inproceedings{55a3a207ec9e4494b7510d8f7fb01af3,

title = "Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt",

abstract = "We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.",

author = "Chen, \{C. Y.\} and Chang, \{P. H.\} and Tsai, \{K. T.\} and He, \{J. H.\}",

year = "2010",

month = jan,

doi = "10.1109/INEC.2010.5424962",

language = "English",

isbn = "978-1-4244-3543-2",

series = "INEC - International Nanoelectronics Conference, Proceedings",

publisher = "IEEE",

pages = "1177--1178",

editor = "Chu, \{Paul K\}",

booktitle = "INEC 2010",

address = "United States",

note = "3rd IEEE International NanoElectronics Conference (INEC 2010) ; Conference date: 03-01-2010 Through 08-01-2010",

url = "http://www.cityu.edu.hk/ieeeinec/",

}

Chen, CY, Chang, PH, Tsai, KT & He, JH 2010, Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt. in PK Chu (ed.), INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings., 5424962, INEC - International Nanoelectronics Conference, Proceedings, IEEE, pp. 1177-1178, 3rd IEEE International NanoElectronics Conference (INEC 2010), Hong Kong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424962

Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt. / Chen, C. Y.; Chang, P. H.; Tsai, K. T. et al.
INEC 2010: 2010 3rd International Nanoelectronics Conference, Proceedings. ed. / Paul K Chu. IEEE, 2010. p. 1177-1178 5424962 (INEC - International Nanoelectronics Conference, Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt

AU - Chen, C. Y.

AU - Chang, P. H.

AU - Tsai, K. T.

AU - He, J. H.

PY - 2010/1

Y1 - 2010/1

N2 - We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

AB - We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

UR - https://www.scopus.com/pages/publications/77951665156

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77951665156&origin=recordpage

U2 - 10.1109/INEC.2010.5424962

DO - 10.1109/INEC.2010.5424962

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-4244-3543-2

T3 - INEC - International Nanoelectronics Conference, Proceedings

SP - 1177

EP - 1178

BT - INEC 2010

A2 - Chu, Paul K

PB - IEEE

T2 - 3rd IEEE International NanoElectronics Conference (INEC 2010)

Y2 - 3 January 2010 through 8 January 2010

ER -

Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt

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