Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Zhitang Song; Chenglu Lin; Anping Huang; Paul K. Chu

doi:10.1016/j.mssp.2006.10.011

Electrical and interfacial characteristics of nanolaminate (Al₂O₃/ZrO₂/Al₂O₃) gate stack on fully depleted SiGe-on-insulator

Zengfeng Di, Miao Zhang, Weili Liu, Qinwo Shen, Zhitang Song, Chenglu Lin, Anping Huang, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

The structural and electrical characteristics of a novel nanolaminate Al₂O₃/ZrO₂/Al₂O₃ high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al₂O₃ (2.5 nm)/ZrO₂ (4.5 nm)/Al₂O₃ (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface. © 2006 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	959-963
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.mssp.2006.10.011
Publication status	Published - Dec 2006

Research Keywords

Capacitance-voltage
High-k gate stack
Oxidation
SiGe-on-insulator

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@article{34710849692c439abf15491ccf39c086,

title = "Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator",

abstract = "The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface. {\textcopyright} 2006 Elsevier Ltd. All rights reserved.",

keywords = "Capacitance-voltage, High-k gate stack, Oxidation, SiGe-on-insulator",

author = "Zengfeng Di and Miao Zhang and Weili Liu and Qinwo Shen and Zhitang Song and Chenglu Lin and Anping Huang and Chu, {Paul K.}",

year = "2006",

month = dec,

doi = "10.1016/j.mssp.2006.10.011",

language = "English",

volume = "9",

pages = "959--963",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

number = "6",

}

TY - JOUR

T1 - Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

AU - Di, Zengfeng

AU - Zhang, Miao

AU - Liu, Weili

AU - Shen, Qinwo

AU - Song, Zhitang

AU - Lin, Chenglu

AU - Huang, Anping

AU - Chu, Paul K.

PY - 2006/12

Y1 - 2006/12

N2 - The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface. © 2006 Elsevier Ltd. All rights reserved.

AB - The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface. © 2006 Elsevier Ltd. All rights reserved.

KW - Capacitance-voltage

KW - High-k gate stack

KW - Oxidation

KW - SiGe-on-insulator

UR - http://www.scopus.com/inward/record.url?scp=33846094003&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33846094003&origin=recordpage

U2 - 10.1016/j.mssp.2006.10.011

DO - 10.1016/j.mssp.2006.10.011

M3 - RGC 21 - Publication in refereed journal

SN - 1369-8001

VL - 9

SP - 959

EP - 963

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -