Abstract
The electrical properties and preferred lattice site of Cu in GaAs were investigated combining electrical and optical measurements with ion beam and structural analysis. From this comprehensive study it was determined that Cu introduces two levels in the band gap, that the concentration of electrically active centers introduced by Cu diffusion is considerably smaller than the total Cu concentration, that this ratio of electrically active to total Cu concentration depends strongly on the cooling speed after diffusion, and that the portion of Cu that remains electrically inactive forms Cu-Ga precipitates. © 1995 Springer-Verlag.
| Original language | English |
|---|---|
| Pages (from-to) | 7-16 |
| Journal | Applied Physics A Materials Science & Processing |
| Volume | 61 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jul 1995 |
| Externally published | Yes |
Research Keywords
- 61.70.-r
- 71.55.Eq
- 72.80.Ey