Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis; C. C. Lo; V. Lang; A. M. Tyryshkin; R. E. George; K. M. Yu; J. Bokor; S. A. Lyon; J. J. L. Morton; T. Schenkel

doi:10.1063/1.4704561

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis^*
, C. C. Lo
, V. Lang
, A. M. Tyryshkin
, R. E. George
, K. M. Yu
, J. Bokor
, S. A. Lyon
, J. J. L. Morton
, T. Schenkel

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

48 Citations (Scopus)

Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp = 12 μT) and long spin coherence times (T₂ = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. © 2012 American Institute of Physics.

Original language	English
Article number	172104
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4704561
Publication status	Published - 23 Apr 2012
Externally published	Yes

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@article{256b4a0384e643ef9901347a85185f6c,

title = "Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28",

abstract = "We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp = 12 μT) and long spin coherence times (T2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. {\textcopyright} 2012 American Institute of Physics.",

author = "Weis, \{C. D.\} and Lo, \{C. C.\} and V. Lang and Tyryshkin, \{A. M.\} and George, \{R. E.\} and Yu, \{K. M.\} and J. Bokor and Lyon, \{S. A.\} and Morton, \{J. J. L.\} and T. Schenkel",

year = "2012",

month = apr,

day = "23",

doi = "10.1063/1.4704561",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

AU - Weis, C. D.

AU - Lo, C. C.

AU - Lang, V.

AU - Tyryshkin, A. M.

AU - George, R. E.

AU - Yu, K. M.

AU - Bokor, J.

AU - Lyon, S. A.

AU - Morton, J. J. L.

AU - Schenkel, T.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp = 12 μT) and long spin coherence times (T2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. © 2012 American Institute of Physics.

AB - We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp = 12 μT) and long spin coherence times (T2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. © 2012 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/84860321950

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84860321950&origin=recordpage

U2 - 10.1063/1.4704561

DO - 10.1063/1.4704561

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172104

ER -

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

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