Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • C. D. Weis
  • C. C. Lo
  • V. Lang
  • A. M. Tyryshkin
  • R. E. George
  • J. Bokor
  • S. A. Lyon
  • J. J L Morton
  • T. Schenkel

Detail(s)

Original languageEnglish
Article number172104
Journal / PublicationApplied Physics Letters
Volume100
Issue number17
Publication statusPublished - 23 Apr 2012
Externally publishedYes

Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. © 2012 American Institute of Physics.

Citation Format(s)

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28. / Weis, C. D.; Lo, C. C.; Lang, V.; Tyryshkin, A. M.; George, R. E.; Yu, K. M.; Bokor, J.; Lyon, S. A.; Morton, J. J L; Schenkel, T.

In: Applied Physics Letters, Vol. 100, No. 17, 172104, 23.04.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review