Electric field distribution in InGaAs/InP PIN photodetector

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

3 Scopus Citations
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Author(s)

  • P. Chiu
  • Ping-I. Shih

Detail(s)

Original languageEnglish
Pages (from-to)237-241
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume4833
Publication statusPublished - 2002

Abstract

Electric field distribution in an InGaAs/InP PIN photodetector was studied. Electron beam induced current (EBIC) was employed using a scanning electron microscope (SEM) with consideration of electron-hole pair generation volume. Depletion width and p+/n- metallurgical junction location were also determined.

Research Area(s)

  • Electric field distribution, Electron beam induced current (EBIC), InGaAs/InP PIN photodetector, Scanning electron microscope (SEM)