Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition

Jiwei Zhai; Xi Yao; Zhengkui Xu; Haydn Chen

doi:10.1080/10584580500413251

Electric fatigue properties of Pb(Zr,Ti)O₃ thin films grown on LaNiO₃ buffer Pt/Ti/SiO₂/Si substrate by metalorganic chemical vapor deposition

Jiwei Zhai, Xi Yao, Zhengkui Xu, Haydn Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

Ferroelectric Pb(Zr,Ti)O₃ thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO₃-buffered Pt/Ti/SiO₂/Si substrates. The highly (100)-oriented LaNiO₃ buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO₂/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.

Original language	English
Pages (from-to)	47-54
Journal	Integrated Ferroelectrics
Volume	75
DOIs	https://doi.org/10.1080/10584580500413251
Publication status	Published - 2005
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005

Research Keywords

Fatigue
Ferroelectric properties
PZT thin film
Thinckness

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10.1080/10584580500413251

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@article{c65bbadca09d4568a52b11cf83aef269,

title = "Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition",

abstract = "Ferroelectric Pb(Zr,Ti)O3 thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100)-oriented LaNiO3 buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.",

keywords = "Fatigue, Ferroelectric properties, PZT thin film, Thinckness",

author = "Jiwei Zhai and Xi Yao and Zhengkui Xu and Haydn Chen",

year = "2005",

doi = "10.1080/10584580500413251",

language = "English",

volume = "75",

pages = "47--54",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor & Francis",

note = "Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

}

TY - JOUR

T1 - Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition

AU - Zhai, Jiwei

AU - Yao, Xi

AU - Xu, Zhengkui

AU - Chen, Haydn

PY - 2005

Y1 - 2005

N2 - Ferroelectric Pb(Zr,Ti)O3 thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100)-oriented LaNiO3 buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.

AB - Ferroelectric Pb(Zr,Ti)O3 thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100)-oriented LaNiO3 buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.

KW - Fatigue

KW - Ferroelectric properties

KW - PZT thin film

KW - Thinckness

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U2 - 10.1080/10584580500413251

DO - 10.1080/10584580500413251

M3 - RGC 21 - Publication in refereed journal

SN - 1058-4587

VL - 75

SP - 47

EP - 54

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

ER -