Abstract
The high rate of charge recombination in quantum‐dot‐sensitized solar cells (QDSCs) limits their power conversion efficiency. Here we address a facile way to reduce back electron transfer of QDSCs by introducing a thin MgO bridge layer between the TiO2 film and quantum dots. The ternary CdSSe QDs were used as our model system, and the MgO‐coated TiO2‐based ternary QDSCs showed a fill factor 41 % larger and efficiency 29 % higher than non‐coated ones. The enhanced performance is owing to the reduced recombination induced by the MgO bridge layer, which has been confirmed by electrochemical impedance spectroscopy (EIS) and intensity‐modulated photovoltage spectroscopy (IMVS) analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 526-530 |
| Journal | Energy Technology |
| Volume | 2 |
| Issue number | 6 |
| Online published | 20 May 2014 |
| DOIs | |
| Publication status | Published - Jun 2014 |
Funding
This work was supported by the National Key Basic Research Program of the Chinese Ministry of Science and Technology(-Project 2012CB932203), the National Natural Science Foundation of China (Project 51202206), and the City University of Hong Kong (9667070, 7003039, and 7004009).
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Research Keywords
- charge recombination
- impedance analysis
- magnesium oxide
- quantum dots
- solar cells
- SEMICONDUCTOR
- TRANSPORT
- CDS/CDSE
- CIRCUIT
- SIZE
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