TY - GEN
T1 - Efficient modeling methods on GaAs MESFETs for Ku- and Ka-band power amplifiers
AU - Guo, Y. X.
AU - Zhong, Z.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2010
Y1 - 2010
N2 - Nowadays GaAs MESFETs dominate in modern MIC/MMIC applications such as switches, PA, LNA, oscillator, etc. Therefore, reliable modeling methodologies and accurate device models of GaAs MESFETs are extremely crucial and in great demand. In this paper, both small signal and large signal modeling methods of GaAs MESFETs will be addressed. Firstly, a GaAs MESFET distributed model based on the accurate EM simulation and optimization method will be presented. For the large-signal modeling of GaAs MESFETs, an improved drain current expressions and a novel gate terminal charge model of gate capacitors will be illustrated. For complete model evaluation, the modeling methods will be extended to design Ku- and Ka-band power amplifiers and good agreement between simulation and measurement will be demonstrated. © 2010 IEEE.
AB - Nowadays GaAs MESFETs dominate in modern MIC/MMIC applications such as switches, PA, LNA, oscillator, etc. Therefore, reliable modeling methodologies and accurate device models of GaAs MESFETs are extremely crucial and in great demand. In this paper, both small signal and large signal modeling methods of GaAs MESFETs will be addressed. Firstly, a GaAs MESFET distributed model based on the accurate EM simulation and optimization method will be presented. For the large-signal modeling of GaAs MESFETs, an improved drain current expressions and a novel gate terminal charge model of gate capacitors will be illustrated. For complete model evaluation, the modeling methods will be extended to design Ku- and Ka-band power amplifiers and good agreement between simulation and measurement will be demonstrated. © 2010 IEEE.
UR - https://www.scopus.com/pages/publications/78650393867
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-78650393867&origin=recordpage
U2 - 10.1109/ISSSE.2010.5606952
DO - 10.1109/ISSSE.2010.5606952
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781424463558
VL - 2
T3 - Conference Proceedings of the International Symposium on Signals, Systems and Electronics
SP - 655
EP - 658
BT - 2010 International Symposium on Signals, Systems and Electronics, ISSSE2010 - Proceedings
T2 - 2010 International Symposium on Signals, Systems and Electronics, ISSSE2010
Y2 - 17 September 2010 through 20 September 2010
ER -